E981.03 Datasheet, PDF (4/51 Pages) ELMOS Semiconductor AG – Autonomous MAC and individual physical address

KNX/ EIB TRANSCEIVER
PRODUCTION DATA - JAN 15, 2015
E981.03
1 Absolute Maximum Ratings
Stresses beyond these absolute maximum ratings listed below may cause permanent damage to the device. These are stress rat-
ings only; operation of the device at these or any other conditions beyond those listed in the operational sections of this document
is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. All voltages
with respect to ground. Currents flowing into terminals are positive, those drawn out of a terminal are negative.
Description
BUSP voltage
BUSP voltage during surge pulse (t < 150µs)
Junction temperature
Storage temperature
ESD immunity (human body model, this test can be ap-
plied between any two pins of the IC)
Voltage at digital and analog VIO pins:
RESET, SAVE, XTAL, INT, SETVCC, OTEMP, SCS, SCK, MOSI,
MISO, RXD, TXD, BS0, BS1, AOUT
Voltage at WK pin
Voltage at VST pin
Voltage at SW pin
Voltage at VCC pin
Voltage at VIO pin
Overall current through digital and analog VIO pins
(latch up immunity):
RESET, SAVE, XTAL, INT, SETVCC, OTEMP, SCS, SCK, MOSI,
MISO, RXD, TXD, BS0, BS1, WK, AOUT
Current through digital and analog VIO pins
(latch up immunity):
RESET, SAVE, XTAL, INT, SETVCC, OTEMP, SCS, SCK, MOSI,
MISO, RXD, TXD, BS0, BS1, WK
Voltage at pin EXTAL
Input voltage at CREC pin
Voltage at pins RTXH, RTXL
Current through RTXL pin
Current through AOUT pin
Voltage at pin V33I pin
Voltage at pin V20
Symbol
V_BUSP
V_{BUSP_surge}
T_J
T_S
V_ESD,hbm
V
V_WK
V_VST
V_SW
V_VCC
V_VIO
I
I
V_EXTAL
V_CREC
V_RTX
I_RTXL
I_AOUT
V_V33I
V_V20
2 Recommended Operation Conditions
Min
-0.3
-0.3
-45
-45
-2
-0.3 V
-0.3
-0.3
-5 V
-0.3
-0.3
-100
-70
-0.3
-15 V
-0.3 V
0
-10
-0.3
-0.3 V
Max
Unit
55
V
65
V
150
°C
150
°C
2
kV
V_IO + 0.3 V
40
V
40
V
V_ST + 0.3 V
8
V
7
V
100
mA
70
mA
+3.6
V
V_BUSP
V_BUSP
800
mA
10
mA
+3.6
V
V_ST + 0.3 V
Description
Condition Symbol
Min
Typ
Max Unit
Ambient temperature
T_amb
-25
25
85
°C
External storage capacitance ⁴⁾
C_ST
270
330
1000 µF
C_ST equivalent series resistance
R_ESR,CST
0.1
1
Ω
C_ST voltage capability
V_CST
35
V
Parallel ceramic capacitance VST to GND
C_CER,ST
80
100
120
nF
Average bus idle voltage
V_BUSP
20
30
33
V
20V supply external capacitance ⁷⁾
C₂₀
10
22
µF
C20 equivalent series resistance
R_ESR,C20
0.1
1
Ω
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0046E.03
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