E981.03 Datasheet, PDF (10/51 Pages) ELMOS Semiconductor AG – Autonomous MAC and individual physical address

KNX/ EIB TRANSCEIVER
PRODUCTION DATA - JAN 15, 2015
E981.03
Electrical Characteristics (continued)
(V_BUSP = 19V … 33V, T_AMB = -25°C … +85°C, unless otherwise noted. Positive currents are flowing into the device pins.
Typical values are at T_AMB = +25°C, unless otherwise noted.)
Description
Condition
Host SP Interface - AC Characteristics
Time between falling SCS edge
and first rising SCK edge
Time between last falling SCK
edge and rising SCS edge
Inter byte gap - time between last
falling SCK edge of a byte
transmission and first rising SCK
edge of subsequent byte within a
SPI transfer relevant especially for
read accesses between address
and data bytes
Period of SPI clock
MOSI data setup time (time be-
tween MOSI data valid and falling
edge of SCK
Input low voltage at pin MOSI data
hold time (time between falling
edge of SCK and MOSI data invali-
dation)
MISO data valid time (time be-
tween rising edge of SCK and
MISO data valid)
C_MISO < 20 pF
Time between rising edge of SCS
and high impedance at MISO
Monitoring Functions
ADC scaling factor for low voltage
V(V_BAUDSPC
signal used
/ V_BUSP)
for
measurement
ADC scaling factor for low voltage
V(V_2A0Ds_Cig/nVa₂l_0)used for measurement
ADC scaling factor for low voltage
V(V_CACDs_Cig/nVa_Cl_C)used for measurement
ADC scaling factor for low voltage
V(V_CACDs_Cig/nVa_Sl_T)used for measurement
ADC scaling factor for low voltage
V_IO signal used for ADC
measurement (V_ADC / V_IO)
Averaging time for mean value of
V_BUSP
Temperature limit for activating
temperature warning
Temperature limit for
deactivating temperature
warning
Temperature limit for reducing
power consumption
Symbol
Min
Typ
t_LS1
30
t_LS2
30
Max Unit
ns
ns
t_IBG
1
µs
t_{P_SCK}
250
ns
t_setup
30
ns
t_hold
20
ns
t_valid
t_{MISO_Z}
35
ns
100
ns
Scale_VBUSP,
ADC
1/16.1 1/15
Scale_V20,ADC 1/8.4
1/8
1/13.9
1/7.6
Scale_VCC,ADC 1/2.14 1/2
1/1.86
Scale_VST,ADC 1/10.7 1/10.05 1/9.4
Scale_VIO,ADC 1/2.36 1/2.2
t_VBUSP(AV)
T_warn,on
T_warn,off
T_shutoff,on
110
5
120
T_warn,on
-10°C
T_warn,on
+30°C
1/2.04
ms
140
°C
°C
°C
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0046E.03
10/51