NPE405H Datasheet, PDF (55/70 Pages) Applied Micro Circuits Corporation – PowerNP NPe405H Embedded Processor

NPe405H – PowerNP NPe405H Embedded Processor
Revision 1.01 – April 18, 2007
Data Sheet
DC ELECTRICAL CHARACTERISTICS
Table 11. DC Electrical Characteristics
Parameter
Symbol
Minimum
Typical
Maximum
Unit
Active Operating Current for V_DD @ 133MHz
I_DD
599
669
740
mA
Active Operating Current for V_DD @ 200MHz
I_DD
755
843
928
mA
Active Operating Current for V_DD @ 266MHz
I_DD
964
1074
1183
mA
Active Operating Current for OV_DD @ 133MHz
I_ODD
77
89
99
mA
Active Operating Current for OV_DD @ 200MHz
I_ODD
89
102
112
mA
Active Operating Current for OV_DD @ 266MHz
I_ODD
97
111
123
mA
Active Operating Current for AV_DD
I_ADD
5.5
6
6.5
mA
Active Operating Power @ 133MHz
PDD
1.6
2
2.41
W
Active Operating Power @ 200MHz
PDD
2
2.4
2.91
W
Active Operating Power @ 266MHz
PDD
2.5
3
3.61
W
Notes:
1. Maximum power is characterized at V_DD=2.7V, OV_DD=3.6V, T_C=85×C, across the silicon process (worse case to best case), while running an application designed to maximize power
consumption. The maximum power values are measured with the following clock rate combinations:
a. CPU=133.33MHz, PLB=66.66MHz, OPB=66.66MHz, EBC=33.33MHz, PCI=33.33MHz
b. CPU=200 MHz, PLB=100MHz, OPB=50MHz, EBC=50MHz, PCI=33.33MHz
c. CPU=266.66MHz, PLB=133.33MHz, OPB=66.66MHz, EBC=66.66MHz, PCI=33.33MHz
TEST CONDITIONS
Clock timing and switching characteristics are specified in accordance with
operating conditions shown in the table “Recommended DC Operating
Output
Pin
Conditions.” AC specifications are characterized at OV_DD = 3.00V and T_J =
50pF
85°C with the 50pF test load shown in the figure at right.
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