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EVAL-ADUC831QSZ Datasheet, PDF (6/76 Pages) Analog Devices – MicroConverter®, 12-Bit ADCs and DACs with Embedded 62 kBytes Flash MCU
ADuC831
SPECIFICATIONS (continued)
Parameter
POWER REQUIREMENTS 19, 20
Power Supply Voltages
AVDD/DVDD to AGND
VDD = 5 V
4.5
5.5
Power Supply Currents Normal Mode
DVDD Current
6
AVDD Current
1.7
DVDD Current
25
21
AVDD Current
1.7
Power Supply Currents Idle Mode
DVDD Current
5
AVDD Current
0.14
DVDD Current4
11
10
AVDD Current
0.14
Power Supply Currents Power Down Mode
AVDD Current
3
DVDD Current
35
25
160
Typical Additional Power Supply Currents
PSM Peripheral
50
ADC
1.5
DAC
150
VDD = 3 V
2.7
3.3
3
1.7
12
10
1.7
1
0.14
5
4
0.14
2.5
20
12
125
Unit
V min
V max
V min
V max
mA typ
mA max
mA max
mA typ
mA max
mA typ
mA typ
mA max
mA typ
mA typ
␮A typ
␮A max
␮A typ
␮A typ
␮A typ
mA typ
␮A typ
Test Conditions/Comments
AVDD /DVDD = 3 V nom
AVDD /DVDD = 5 V nom
MCLKIN = 1 MHz
MCLKIN = 1 MHz
MCLKIN = 16 MHz
MCLKIN = 16 MHz
MCLKIN = 16 MHz
MCLKIN = 1 MHz
MCLKIN = 1 MHz
MCLKIN = 16 MHz
MCLKIN = 16 MHz
MCLKIN = 16 MHz
MCLKIN = 2 MHz or 16 MHz
TIMECON.1 = 0
TIMECON.1 = 1
AVDD = DVDD = 5 V
NOTES
1Temperature Range –40ºC to +125ºC.
2ADC linearity is guaranteed during normal Micro Converter core operation.
3ADC LSB Size = VREF/212 i.e., for Internal VREF = 2.5 V, 1 LSB = 610 ␮V and for External VREF =1 V, 1 LSB = 244 ␮V.
4These numbers are not production tested but are guaranteed by design and/or characterization data on production release.
5Offset and Gain Error and Offset and Gain Error Match are measured after factory calibration.
6Based on external ADC system components, the user may need to execute a system calibration to remove additional external channel errors and achieve
these specifications.
7SNR calculation includes distortion and noise components.
8Channel-to-channel Crosstalk is measured on adjacent channels.
9The Temperature Monitor will give a measure of the die temperature directly; air temperature can be inferred from this result.
10DAC linearity is calculated using:
Reduced code range of 100 to 4095, 0 to VREF range.
Reduced code range of 100 to 3945, 0 to VDD range.
DAC Output Load = 10 kΩ and 100 pF.
11DAC differential nonlinearity specified on 0 to VREF and 0 to VDD ranges
12DAC specification for output impedance in the unbuffered case depends on DAC code.
13DAC specifications for ISINK, voltage output settling time, and digital-to-analog glitch energy depend on external buffer implementation in unbuffered mode. DAC
in unbuffered mode tested with OP270 external buffer, which has a low input leakage current.
14Measured with VREF and CREF pins decoupled with 0.1 µF capacitors to ground. Power-up time for the internal reference will be determined by the value of the
decoupling capacitor chosen for both the VREF and CREF pins.
15When using an external reference device, the internal band gap reference input can be bypassed by setting the ADCCON1.6 bit. In this mode the V REF and CREF
pins need to be shorted together for correct operation.
16Flash/EE Memory reliability characteristics apply to both the Flash/EE program memory and the Flash/EE data memory.
17Endurance is qualified to 100,000 cycles as per JEDEC Std. 22 method A117 and measured at -40ºC, +25ºC, and +125ºC. Typical endurance at
25ºC is 700,000 cycles.
18Retention lifetime equivalent at junction temperature (Tj) = 55ºC as per JEDEC Std. 22 method A117. Retention lifetime based on an activation energy of 0.6 eV
will derate with junction temperature as shown in Figure 18 in the Flash/EE Memory description section of this data sheet.
19Power supply current consumption is measured in Normal, Idle, and Power-Down Modes under the following conditions:
Normal Mode:
Reset = 0.4 V, Digital I/O pins = open circuit, Core Executing internal software loop.
Idle Mode:
Reset = 0.4 V, Digital I/O pins = open circuit, Core Execution suspended in idle mode.
Power-Down Mode: Reset = 0.4 V, All Port 0 pins = 0.4 V, All other digital I/O pins and Port 1 are open circuit, OSC off, TIC off.
20DVDD power supply current will increase typically by 3 mA (3 V operation) and 10 mA (5 V operation) during a Flash/EE memory program or erase cycle.
Specifications subject to change without notice.
–6–
REV. 0