EVAL-ADUC831QSZ Datasheet, PDF (29/76 Pages) Analog Devices – MicroConverter®, 12-Bit ADCs and DACs with Embedded 62 kBytes Flash MCU

ADuC831
USING THE FLASH/EE DATA MEMORY
The 4 kBytes of Flash/EE data memory is configured as 1024
pages, each of four bytes. As with the other ADuC831 peripherals,
the interface to this memory space is via a group of registers mapped
in the SFR space. A group of four data registers (EDATA1–4)
are used to hold the four bytes of data at each page. The page is
addressed via the two registers EADRH and EADRL. Finally,
ECON is an 8-bit control register that may be written with one
of nine Flash/EE memory access commands to trigger various
read, write, erase, and verify functions.
A block diagram of the SFR interface to the Flash/EE data
memory array is shown in Figure 20.
ECON—Flash/EE Memory Control SFR
Programming of either the Flash/EE data memory or the Flash/EE
program memory is done through the Flash/EE memory control
SFR (ECON). This SFR allows the user to read, write, erase, or
verify the 4 kBytes of Flash/EE data memory or the 56 kBytes of
Flash/EE program memory.
3FFH
3FEH
BYTE 1
(0FFCH)
BYTE 1
(0FF8H)
BYTE 2
(0FFDH)
BYTE 2
(0FF9H)
BYTE 3
(0FFEH)
BYTE 3
(0FFAH)
BYTE 4
(0FFFH)
BYTE 4
(0FFBH)
03H
02H
01H
00H
BYTE 1
(000CH)
BYTE 1
(0008H)
BYTE 1
(0004H)
BYTE 1
(0000H)
BYTE
ADDRESSES
ARE GIVEN IN
BRACKETS
BYTE 2
(000DH)
BYTE 2
(0009H)
BYTE 2
(0005H)
BYTE 2
(0001H)
BYTE 3
(000EH)
BYTE 3
(000AH)
BYTE 3
(0006H)
BYTE 3
(0002H)
BYTE 4
(000FH)
BYTE 4
(000BH)
BYTE 4
(0007H)
BYTE 4
(0003H)
Figure 20. Flash/EE Data Memory Control and Configuration
Table VII. ECON—Flash/EE Memory Commands
COMMAND DESCRIPTION
ECON VALUE (NORMAL MODE) (Power-On Default)
01H
READ
Results in 4 bytes in the Flash/EE data memory,
addressed by the page address EADRH/L, being read
into EDATA1–4.
COMMAND DESCRIPTION
(ULOAD MODE)
Not Implemented. Use the MOVC instruction.
02H
WRITE
Results in four bytes in EDATA1–4 being written to
the Flash/EE data memory, at the page address given by
EADRH/L (0 ≤ EADRH/L < 0400H.
Note: The four bytes in the page being addressed must
be pre-erased.
Results in bytes 0-255 of internal XRAM being written
to the 256 bytes of Flash/EE program memory at the
page address given by EADRH. (0 ≤ EADRH < E0H)
Note: The 256 bytes in the page being addressed must
be pre-erased.
03H
04H
VERIFY
Reserved Command
Verifies if the data in EDATA1–4 is contained in the
page address given by EADRH/L. A subsequent read
of the ECON SFR will result in a 0 being read if the
verification is valid, or a nonzero value being read to
indicate an invalid verification.
Reserved Command
Not Implemented. Use the MOVC and MOVX
instructions to verify the WRITE in software.
05H
Results in the Erase of the 4-byte page of Flash/EE data
ERASE PAGE memory addressed by the page address EADRH/L.
06H
ERASE ALL
Results in the erase of entire 4 kBytes of Flash/EE
data memory.
Results in the 64-byte page of Flash/EE program
memory, addressed by the byte address EADRH/L
being erased. EADRL can equal any of 64 locations
within the page. A new page starts whenever EADRL
is equal to 00H, 40H, 80H, or C0H.
Results in the Erase of the entire 56 kBytes of ULOAD
Flash/EE program memory.
81H
READBYTE
82H
WRITEBYTE
0FH
EXULOAD
Results in the byte in the Flash/EE data memory,
addressed by the byte address EADRH/L, being read
into EDATA1. (0 ≤ EADRH/L ≤ 0FFFH).
Results in the byte in EDATA1 being written into
Flash/EE data memory, at the byte address EADRH/L.
Leaves the ECON instructions to operate on the
Flash/EE data memory.
Not Implemented. Use the MOVC command.
Results in the byte in EDATA1 being written into
Flash/EE program memory, at the byte address
EADRH/L (0 ≤ EADRH/L ≤ DFFFH).
Enters NORMAL mode directing subsequent ECON
instructions to operate on the Flash/EE data memory.
F0H
ULOAD
Enters ULOAD mode, directing subsequent ECON
Leaves the ECON instructions to operate on the
instructions to operate on the Flash/EE program memory. Flash/EE program memory.
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