W25Q256JVEIQ-TR Datasheet, PDF (84/92 Pages) Winbond – 3V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI

W25Q256JV
9.7 AC Electrical Characteristics (cont’d)
DESCRIPTION
/CS High to Power-down Mode
/CS High to Standby Mode without ID Read
/CS High to Standby Mode with ID Read
/CS High to next Instruction after Suspend
/CS High to next Instruction after Reset
/RESET pin Low period to reset the device
SYMBOL
tDP⁽²⁾
tRES1⁽²⁾
tRES2⁽²⁾
tSUS⁽²⁾
tRST⁽²⁾
tRESET⁽²⁾
ALT
MIN
1⁽⁴⁾
SPEC
TYP
MAX
3
3
1.8
20
30
Write Status Register Time
tW
10
15
UNIT
µs
µs
µs
µs
µs
µs
ms
Page Program Time
Sector Erase Time (4KB)
Block Erase Time (32KB)
Block Erase Time (64KB)
Chip Erase Time
tPP
0.7
3
ms
tSE
50
400
ms
tBE1
120
1,600
ms
tBE2
150
2,000
ms
tCE
80
400
s
Notes:
1.
2.
3.
4.
5.
6.
Clock high + Clock low must be less than or equal to Pc. Pc = 1/fc(max.)
Value guaranteed by design and/or characterization, not 100% tested in production.
Only applicable as a constraint for a Write Status Register instruction when SRP=1.
It is possible to reset the device with shorter tRESET (as short as a few hundred ns), a 1us minimum is recommended to
ensure reliable operation.
Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3.0V
4-bytes address alignment for Quad Read: read address start from A1,A0=0,0
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