M36W832TE Datasheet, PDF (9/64 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product

M36W832TE, M36W832BE
V_SSF and V_SSS Ground. V_SSF and V_SSS are the
ground reference for all voltage measurements in
the Flash and SRAM chips, respectively.
Note: Each device in a system should have V_D-
DF^{, V}DDQF ^{and V}PPF ^{decoupled with a 0.1µF ca-}
pacitor close to the pin. See Figure 9, AC
Measurement Load Circuit. The PCB trace
widths should be sufficient to carry the re-
quired V_PPF program and erase currents.
FUNCTIONAL DESCRIPTION
The Flash and SRAM components have separate
power supplies and grounds and are distinguished
by three chip enable inputs: EF for the Flash mem-
ory and, E1S and E2S for the SRAM.
Recommended operating conditions do not allow
both the Flash and the SRAM to be in active mode
at the same time. The most common example is
simultaneous read operations on the Flash and
the SRAM which would result in a data bus con-
tention. Therefore it is recommended to put the
SRAM in the high impedance state when reading
the Flash and vice versa (see Table 2 Main Oper-
ation Modes for details).
Figure 4. Functional Block Diagram
VDDF VDDQF VPPF
EF
GF
WF
RPF
WPF
A19-A20
A0-A18
Flash Memory
32 Mbit (x16)
VDDS
VSSF
DQ0-DQ15
E1S
E2S
SRAM
GS
8 Mbit (x16)
WS
UBS
LBS
VSSS
AI90163
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