M36W832TE Datasheet, PDF (29/64 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product

Symbol
Parameter
I_PPE
Program Current
(Erase)
V_IL Input Low Voltage
V_IH Input High Voltage
V_OL Output Low Voltage
V_OH Output High Voltage
V_PPL
Program Voltage
(Program or Erase
operations)
V_PPH
Program Voltage
(Program or Erase
operations)
Program Voltage
V_PPLK (Program and Erase
lock-out)
V_LKO
V_DDF Supply Voltage
(Program and Erase
lock-out)
Device
Flash
Flash &
SRAM
Flash &
SRAM
Flash &
SRAM
Flash &
SRAM
Flash
Flash
Flash
Flash
M36W832TE, M36W832BE
Test Condition
Erase in progress
V_PPF = 12V ± 5%
Erase in progress
V_PPF = V_DDF
V_DDQF = V_DDS ≥ 2.7V
V_DDQF = V_DDS ≥ 2.7V
V_DDQF = V_DDS = V_DD min
I_OL = 100µA
V_DDQF = V_DDS = V_DD min
I_OH = –100µA
Min Typ Max Unit
3
10 mA
1
5
µA
–0.3
0.7V_DD
QF
0.8
V
V_DDQF
+0.4
V
0.1
V
2.4
V
1.65
3.6
V
11.4
12.6 V
1
V
2
V
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