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M36W832TE Datasheet, PDF (30/64 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832TE, M36W832BE
Figure 10. Flash Read Mode AC Waveforms
A0-A20
EF
GF
DQ0-DQ15
tAVQV
tAVAV
VALID
tELQV
tELQX
tGLQX
tGLQV
VALID
ADDR. VALID
CHIP ENABLE
OUTPUTS
ENABLED
DATA VALID
tAXQX
tEHQX
tEHQZ
tGHQX
tGHQZ
STANDBY
AI90168b
Table 16. Flash Read AC Characteristics
Symbol Alt
Parameter
Flash Device
70
85
tAVAV
tRC Address Valid to Next Address Valid
Min
70
85
tAVQV
tACC Address Valid to Output Valid
Max
70
85
tAXQX (1) tOH Address Transition to Output Transition
Min
0
0
tEHQX (1) tOH Chip Enable High to Output Transition
Min
0
0
tEHQZ (1)
tHZ Chip Enable High to Output Hi-Z
Max
20
20
tELQV (2)
tCE Chip Enable Low to Output Valid
Max
70
85
tELQX (1)
tLZ Chip Enable Low to Output Transition
Min
0
0
tGHQX (1) tOH Output Enable High to Output Transition
Min
0
0
tGHQZ (1) tDF Output Enable High to Output Hi-Z
Max
20
20
tGLQV (2) tOE Output Enable Low to Output Valid
Max
20
20
tGLQX (1) tOLZ Output Enable Low to Output Transition
Min
0
0
Note: 1. Sampled only, not 100% tested.
2. GF may be delayed by up to tELQV - tGLQV after the falling edge of EF without increasing tELQV.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
30/64