M36W832TE Datasheet, PDF (20/64 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product

M36W832TE, M36W832BE
Table 8. Flash Program, Erase Times and Program/Erase Endurance Cycles
Parameter
Test Conditions
Flash Device
Min
Typ
Max
Unit
Word Program
V_PPF = V_DDF
10
200
µs
Double Word Program
V_PPF = 12V ±5%
10
200
µs
Quadruple Word Program
V_PPF = 12V ±5%
10
200
µs
Main Block Program
V_PPF = 12V ±5%
V_PPF = V_DDF
0.16/0.08 ⁽¹⁾
5
s
0.32
5
s
Parameter Block Program
V_PPF = 12V ±5%
V_PPF = V_DDF
0.02/0.01 ⁽¹⁾
4
s
0.04
4
s
Main Block Erase
V_PPF = 12V ±5%
V_PPF = V_DDV_DDF
1
10
s
1
10
s
Parameter Block Erase
V_PPF = 12V ±5%
V_PPF = V_DDF
0.4
10
s
0.4
10
s
Program/Erase Cycles (per Block)
100,000
cycles
Note: 1. Typical time to program a Main or Parameter Block using the Double Word Program and the Quadruple Word Program commands
respectively.
20/64