M36W832TE Datasheet, PDF (63/64 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product

M36W832TE, M36W832BE
REVISION HISTORY
Table 36. Document Revision History
Date
Version
Revision Details
16-Jul-2002
1.0
First Issue
29-Nov-2002
Revision History moved to end of document. Flash and SRAM components updated.
Table 2, Main Operation Modes, modified.
Flash Device: “Quadruple Word Program Command” added, “Double Word Program
Command” clarified, V_DDQF Maximum changed to 3.6V, Corrections to Table 8, Flash
Program, Erase Times and Program/Erase Endurance Cycles, Table 15, DC
2.0
Characteristicss Table and to CFI Tables 30 and 31. Security block removed.
Command Codes Table added, DQ0, DQ2, DQ3-DQ7 and DQ8-DQ15 parameters
modified for Lock in Table 7, Flash Read Protection Register and Lock Register.
70ns Speed Class added. 100ns Speed Class removed.
SRAM device: “Data Retention” on Page 25 and SRAM read and write AC
characteristics (Figures 14, 15, 16, 17, 18, 19, 20, 21 and 22) modified. Figure 7,
SRAM Block Diagram, added.
24-Mar-2003
Document promoted to full Datasheet status. Minor corrections to SRAM Block
3.0
Diagram. Input Rise and Fall Time for 70ns speed class modified in Operating and AC
Measurement Conditions Table. LFBGA Connections and Daisy Chain pin numbers
modified.
26-May-2003
3.1
Special tape option added to ordering information scheme
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