M36W832TE Datasheet, PDF (18/64 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product

M36W832TE, M36W832BE
Refer to the “Flash Block Locking” section for a de-
tailed explanation.
Table 4. Flash Commands
Bus Write Operations
Commands
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
5th Cycle
Op. Add Data Op. Add Data Op. Add Data Op. Add Data Op. Add Data
Read Memory
Array
1+ Write X FFh Read RA RD
Read Status
Register
1+ Write X 70h Read X SRD
Read Electronic
Signature
1+ Write X
90h Read _SA⁽²⁾ IDh
Read CFI Query 1+ Write X 98h Read QA QD
Erase
2 Write X 20h Write BA D0h
Program
40h
2 Write X or Write PA PD
10h
Double Word
Program⁽³⁾
3 Write X 30h Write PA1 PD1 Write PA2 PD2
Quadruple Word
Program⁽⁴⁾
5 Write X 56h⁽⁶⁾ Write PA1 PD1 Write PA2 PD2 Write PA3 PD3 Write PA4 PD4
Clear Status
Register
1 Write X 50h
Program/Erase
Suspend
1 Write X B0h
Program/Erase
Resume
1 Write X D0h
Block Lock
2 Write X 60h Write BA 01h
Block Unlock
2 Write X 60h Write BA D0h
Block Lock-Down 2 Write X 60h Write BA 2Fh
Protection
Register Program
2 Write
X
C0h Write PRA PRD
Note: X = Don’t Care.
1. The signature addresses are listed in Tables 5, 6 and 7.
2. Addr 1 and Addr 2 must be consecutive Addresses differing only for A0.
3. Program Addresses 1 and 2 must be consecutive Addresses differing only for A0.
4. Program Addresses 1,2,3 and 4 must be consecutive Addresses differing only for A0 and A1.
5. 55h is reserved.
6. To be characterized.
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