M36W832TE Datasheet, PDF (37/64 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product

M36W832TE, M36W832BE
Table 20. SRAM Read AC Characteristics
Symbol
Alt
Parameter
t_AVAV
t_RC Read Cycle Time
t_AVQV
t_ACC Address Valid to Output Valid
t_AXQX
t_OH Address Transition to Output Transition
t_E1HQZ
t_E2LQZ
t_CHZ1 Chip Enable 1 High to Output Hi-Z
t_E1LQV
t_E2HQV
t_ACS1 Chip Enable 1 Low or Chip Enable 2 High to Output Valid
t_E1LQX
t_E2HQX
t_CLZ1 Chip Enable 1 Low to Output Transition
t_GHQZ
t_OHZ Output Enable High to Output Hi-Z
t_GLQV
t_OE Output Enable Low to Output Valid
t_GLQX
t_OLZ Output Enable Low to Output Transition
t_PD ⁽¹⁾
Chip Enable 1 High or Chip Enable 2 Low to Power Down
t_PU ⁽¹⁾
Chip Enable 1 Low or Chip Enable 2 High to Power Up
Note: 1. Sampled only. Not 100% tested.
Figure 17. SRAM Write AC Waveforms, E1_S or E2S Controlled
tAVAV
A0-A18
ADDRESS VALID
tAVE1H
tAVE2L
tAVE1L
tE1LE1H
E1S
SRAM
Min
Max
70
70
10
25
70
10
25
35
5
70
0
tE1HAX
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
E2S
WS
DQ0-DQ15
tAVE2H
tE2HE2L
tWLE1H
tWLE2L
tE2LAX
tDVE1H
tDVE2L
tE1HDZ
tE2LDZ
INPUT VALID
Note: 1. DQ0-DQ15 are high impedance if GS = VIH.
2. If E1S or E2S and WS are deasserted at the same time, DQ0-DQ15 remain high impedance.
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