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| M36W832TE Datasheet, PDF (49/64 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product | |||
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M36W832TE, M36W832BE
Table 30. CFI Query System Interface Information
Offset
Data
Description
VDDF Logic Supply Minimum Program/Erase or Write voltage
1Bh
0027h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
VDDF Logic Supply Maximum Program/Erase or Write voltage
1Ch
0036h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
VPPF [Programming] Supply Minimum Program/Erase voltage
1Dh
00B4h
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
VPPF [Programming] Supply Maximum Program/Erase voltage
1Eh
00C6h
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
1Fh
0004h Typical time-out per single word program = 2n µs
20h
0004h Typical time-out for Double/ Quadruple Word Program = 2n µs
21h
000Ah Typical time-out per individual block erase = 2n ms
22h
0000h Typical time-out for full chip erase = 2n ms
23h
0005h Maximum time-out for word program = 2n times typical
24h
0005h Maximum time-out for Double/ Quadruple Word Program = 2n times typical
25h
0003h Maximum time-out per individual block erase = 2n times typical
26h
0000h Maximum time-out for chip erase = 2n times typical
Value
2.7V
3.6V
11.4V
12.6V
16µs
16µs
1s
NA
512µs
512µs
8s
NA
49/64
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