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| M36W832TE Datasheet, PDF (28/64 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product | |||
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M36W832TE, M36W832BE
Table 15. DC Characteristics
Symbol
Parameter
ILI Input Leakage Current
ILO Output Leakage Current
IDDS VDD Standby Current
IDDD
Supply Current
(Reset)
IDD Supply Current
IDDR
Supply Current
(Read)
IDDW
Supply Current
(Program)
IDDE
Supply Current
(Erase)
IDDES
IPP
IPP1
IPP2
Supply Current
(Program/Erase
Suspend)
Program Current
(Read or Standby)
Program Current
(Reset)
IPPW
Program Current
(Program)
Device
Flash &
SRAM
Flash
SRAM
Flash
SRAM
Flash
SRAM
Flash
Flash
Flash
Flash
Flash
Flash
Flash
Test Condition
Min
0V ⤠VIN ⤠VDDQF
0V ⤠VOUT ⤠VDDQF,
0V ⤠VOUT ⤠VDDQF,
SRAM Outputs Hi-Z
EF = VDDQF ± 0.2V
VDDQF = VDDF max
E1S ⥠VDDS â 0.3V
or E2S ⤠0.3V
VIN ⥠VDDS â 0.3V or VIN ⤠0.3V
f = fmax (Address and Data
inputs only)
f = 0 (GS, WS, UBS and LBS)
E1S ⥠VDDS â 0.3V
or E2S ⤠0.3V
VIN ⥠VDDS â 0.3V or VIN ⤠0.3V
f = 0, VDDS = VDDS max
RPF = VSSF ± 0.2V
VOUT = 0mA
f = fmax = 1/tAVAV, CMOS levels
VDDS = VDDS max
IOUT = 0 mA, f = 1MHz, CMOS
Levels
EF = VIL, GF = VIH, f = 5 MHz
Program in progress
VPPF = 12V ± 5%
Program in progress
VPPF = VDDF
Erase in progress
VPPF = 12V ± 5%
Erase in progress
VPPF = VDDF
EF = VDDQF ± 0.2V,
Erase suspended
VPPF > VDDF
VPPF ⤠VDDF
RPF = VSSF ± 0.2V
Program in progress
VPPF = 12V ± 5%
Program in progress
VPPF = VDDF
Typ Max Unit
±2
µA
±10 µA
±1
µA
15
50
µA
8
25
µA
8
25
µA
15
50
µA
7
15 mA
1
2
mA
9
18 mA
5
10 mA
10
20 mA
5
20 mA
10
20 mA
15
50
µA
400 µA
1
5
µA
1
5
µA
1
10 mA
1
5
µA
28/64
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