M36W832TE Datasheet, PDF (27/64 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product

M36W832TE, M36W832BE
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment Conditions summarized in Table 13,
Operating and AC Measurement Conditions. De-
signers should check that the operating conditions
in their circuit match the measurement conditions
when relying on the quoted parameters.
The operating and AC measurement parameters
given below (see Table 13, Operating and AC
Measurement Conditions) are those of the stand-
alone Flash and SRAM devices and some differ
from those of the stacked product.
Table 13. Operating and AC Measurement Conditions
SRAM
Parameter
70
Min
Max
V_DDF Supply Voltage
–
–
V_DDQF Supply Voltage
–
–
V_DDS Supply Voltage
2.7
3.3
Ambient Operating Temperature
– 40
85
Load Capacitance (C_L)
50
Input Rise and Fall Times
3.3
Input Pulse Voltages
0 to V_DDQF
Input and Output Timing Ref. Voltages
V_DDQF/2
Flash Memory
70 / 85
Min
Max
2.7
3.6
2.7
3.6
–
–
– 40
85
50
5
0 to V_DDQF
V_DDQF/2
Units
V
V
V
°C
pF
ns
V
V
Figure 8. AC Measurement I/O Waveform
VDDQ
0V
Note: V_DDQ means V_DDQF = V_DDS
VDDQ/2
AI90166
Figure 9. AC Measurement Load Circuit
VDDQF
VDDQF
VDDF
0.1µF
0.1µF
DEVICE
UNDER
TEST
25kΩ
CL
25kΩ
Table 14. Device Capacitance
Symbol
Parameter
C_IN
Input Capacitance
C_OUT
Output Capacitance
Note: Sampled only, not 100% tested.
CL includes JIG capacitance
AI90167
Test Condition
V_IN = 0V, f=1 MHz
V_OUT = 0V, f=1 MHz
Max
12
16
Unit
pF
pF
27/64