M36W832TE Datasheet, PDF (41/64 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product

M36W832TE, M36W832BE
Figure 21. SRAM Low V_DDS Data Retention AC Waveforms, E1S Controlled
V_DDS
E1S
V_{DDS (min)}
DATA RETENTION MODE
VDR ^> 1.5V
tCDR
tR
V_{DDS (min)}
E1S ^> V_DDS - 0.3V and E2S ^< 0.3V
or E2S ^> V_DDS - 0.3V
AI07970
Figure 22. SRAM Low V_DDS Data Retention AC Waveforms, E2S Controlled
V_DDS
E2S
V_{DDS (min)}
DATA RETENTION MODE
VDR ^> 1.5V
tCDR
tR
E2S ^< 0.3V
V_{DDS (min)}
AI07982
Table 22. SRAM Low V_DDS Data Retention Characteristic
Symbol
Parameter
Test Condition
I_DDDR Supply Current (Data Retention)
V_DDS = 1.5V, E1S ≥ V_DDS – 0.3V,
V_IN ≥ V_DDS – 0.3V or V_IN ≤ 0.3V
No input may exceed V_DDS + 0.3V
V_DR Supply Voltage (Data Retention)
t_CDR Chip Disable to Power Down
t_R Operation Recovery Time
Note: 1. Sampled only. Not 100% tested.
Min Typ Max Unit
4
20 µA
1.5
3.3 V
0
ns
70
ns
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