EFM8SB1 Datasheet, PDF (21/55 Pages) Silicon Laboratories – The EFM8SB1 highlighted features are listed below

Parameter
Weak Pull-Up Current
Input Leakage
Symbol Test Condition
Min
I_PU
V_DD = 1.8 V
—
V_IN = 0 V
V_DD = 3.6 V
–35
V_IN = 0 V
I_LK
Weak pullup disabled or pin in ana-
–1
log mode
EFM8SB1 Data Sheet
Electrical Specifications
Typ
Max
Unit
–4
—
µA
–20
—
µA
—
1
µA
4.2 Thermal Conditions
Table 4.16. Thermal Conditions
Parameter
Symbol Test Condition
Min
Typ
Thermal Resistance*
θ_JA
QFN-24 Packages
QFN-20 Packages
—
35
—
60
QSOP-24 Packages
—
65
Note:
1. Thermal resistance assumes a multi-layer PCB with any exposed pad soldered to a PCB pad.
Max
Unit
—
°C/W
—
°C/W
—
°C/W
4.3 Absolute Maximum Ratings
Stresses above those listed in Table 4.17 Absolute Maximum Ratings on page 20 may cause permanent damage to the device. This
is a stress rating only and functional operation of the devices at those or any other conditions above those indicated in the operation
listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. For
more information on the available quality and reliability data, see the Quality and Reliability Monitor Report at http://www.silabs.com/
support/quality/pages/default.aspx.
Table 4.17. Absolute Maximum Ratings
Parameter
Symbol Test Condition
Ambient Temperature Under Bias
T_BIAS
Storage Temperature
T_STG
Voltage on V_DD
V_DD
Voltage on I/O pins or RSTb
V_IN
Total Current Sunk into Supply Pin
I_VDD
Total Current Sourced out of Ground I_GND
Pin
Current Sourced or Sunk by Any I/O I_IO
Pin or RSTb
Maximum Total Current through all
Port Pins
I_IOTOT
Operating Junction Temperature
T_J
Exposure to maximum rating conditions for extended periods may affect device reliability.
Min
Max
Unit
–55
125
°C
–65
150
°C
GND–0.3
4.0
V
GND–0.3 V_DD + 0.3
V
—
400
mA
400
—
mA
-100
100
mA
—
200
mA
–40
105
°C
silabs.com | Smart. Connected. Energy-friendly.
Rev. 1.2 | 20