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EFM8SB1 Datasheet, PDF (20/55 Pages) Silicon Laboratories – The EFM8SB1 highlighted features are listed below
Parameter
Symbol Conditions
Min
Output Settling Time to 1/2 LSB
tSETTLE
—
Startup Time
tPWR
—
Note:
1. The PCA block may be used to improve IREF0 resolution by PWMing the two LSBs.
EFM8SB1 Data Sheet
Electrical Specifications
Typ
Max
Units
300
—
ns
1
—
µs
Table 4.14. Capacitive Sense (CS0)
Parameter
Symbol Conditions
Min
Typ
Max
Units
Single Conversion Time1
tCNV
12-bit Mode
13-bit Mode (default)
20
25
40
µs
21
27
42.5
µs
14-bit Mode
23
29
45
µs
16-bit Mode
26
33
50
µs
Number of Channels
NCHAN
24-pin Packages
20-pin Packages
14
Channels
13
Channels
16-pin Packages
12
Channels
Capacitance per Code
CLSB
Default Configuration, 16-bit codes
—
1
—
fF
Maximum External Capacitive
Load
CEXTMAX
CS0CG = 111b (Default)
CS0CG = 000b
—
45
—
pF
—
500
—
pF
Maximum External Series Impe-
dance
REXTMAX CS0CG = 111b (Default)
—
50
—
kΩ
Note:
1. Conversion time is specified with the default configuration.
2. RMS Noise is equivalent to one standard deviation. Peak-to-peak noise encompasses ±3.3 standard deviations. The RMS noise
value is specified with the default configuration.
Table 4.15. Port I/O
Parameter
Output High Voltage (High Drive)
Output Low Voltage (High Drive)
Output High Voltage (Low Drive)
Output Low Voltage (Low Drive)
Input High Voltage
Input Low Voltage
Symbol
VOH
VOL
VOH
VOL
VIH
VIL
Test Condition
IOH = –3 mA
IOL = 8.5 mA
IOH = –1 mA
IOL = 1.4 mA
VDD = 2.0 to 3.6 V
VDD = 1.8 to 2.0 V
VDD = 2.0 to 3.6 V
VDD = 1.8 to 2.0 V
Min
Typ
Max
Unit
VDD – 0.7
—
—
V
—
—
0.6
V
VDD – 0.7
—
—
V
—
—
0.6
V
VDD – 0.6
—
—
V
0.7 x VDD
—
—
V
—
—
0.6
V
—
—
0.3 x VDD
V
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