EFM8SB1 Datasheet, PDF (15/55 Pages) Silicon Laboratories – The EFM8SB1 highlighted features are listed below

Parameter
Symbol
Missing Clock Detector Response t_MCD
Time (final rising edge to reset)
Missing Clock Detector Trigger
Frequency
F_MCD
Test Condition
F_SYSCLK > 1 MHz
Table 4.4. Flash Memory
EFM8SB1 Data Sheet
Electrical Specifications
Min
Typ
Max
Unit
100
650
1000
µs
—
7
10
kHz
Parameter
Symbol Test Condition
Min
Typ
Max
Write Time¹
t_WRITE
One Byte
57
64
71
Erase Time¹
t_ERASE
One Page
28
32
36
Endurance (Write/Erase Cycles) N_WE
20 k
100 k
—
Note:
1. Does not include sequencing time before and after the write/erase operation, which may be multiple SYSCLK cycles.
2. Data Retention Information is published in the Quarterly Quality and Reliability Report.
Units
µs
ms
Cycles
Table 4.5. Power Management Timing
Parameter
Symbol Test Condition
Min
Idle Mode Wake-up Time
t_IDLEWK
2
Suspend Mode Wake-up Time
t_SUS-
CLKDIV = 0x00
—
PENDWK _{Low Power or Precision Osc.}
Sleep Mode Wake-up Time
t_SLEEPWK
—
Table 4.6. Internal Oscillators
Parameter
Symbol Test Condition
Min
High Frequency Oscillator 0 (24.5 MHz)
Oscillator Frequency
f_HFOSC0 Full Temperature and Supply
24
Range
Low Power Oscillator (20 MHz)
Oscillator Frequency
f_LPOSC
Full Temperature and Supply
18
Range
Low Frequency Oscillator (16.4 kHz internal RTC oscillator)
Oscillator Frequency
f_LFOSC
Full Temperature and Supply
Range
13.1
Table 4.7. Crystal Oscillator
Parameter
Symbol Test Condition
Min
Crystal Frequency
f_XTAL
0.02
Typ
—
400
2
Typ
24.5
20
16.4
Typ
—
Max
Units
3
SYSCLKs
—
ns
—
µs
Max
Unit
25
MHz
22
MHz
19.7
kHz
Max
Unit
25
MHz
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