EFM8SB1 Datasheet, PDF(13/55 Page) Silicon Laboratories – The EFM8SB1 highlighted features are listed below

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EFM8SB1 Datasheet, PDF (13/55 Pages) Silicon Laboratories – The EFM8SB1 highlighted features are listed below

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Parameter

Symbol Conditions

Min

Sleep Mode Supply Current with IDD

1.8 V, T = 25 Â°C

RTC running from internal LFO

3.6 V, T = 25 Â°C

1.8 V, T = 85 Â°C

3.6 V, T = 85 Â°C

Sleep Mode Supply Current (RTC IDD

1.8 V, T = 25 Â°C

off)

3.6 V, T = 25 Â°C

1.8 V, T = 85 Â°C

3.6 V, T = 85 Â°C

VDD Monitor Supply Current

IVMON

Oscillator Supply Current

IHFOSC0 25 Â°C

ADC0 Always-on Power Supply

IADC

300 ksps, 10-bit conversions or

Current7

75 ksps, 12-bit conversions

Normal bias settings

VDD = 3.0 V

150 ksps, 10-bit conversions or

37.5 ksps 12-bit conversions

Low power bias settings

VDD = 3.0 V

Comparator 0 (CMP0) Supply Cur- ICMP

CPMD = 11

rent

CPMD = 10

CPMD = 01

CPMD = 00

Internal Fast-Settling 1.65V ADC0 IVREFFS Normal Power Mode

Reference, Always-on8

Low Power Mode

Temp sensor Supply Current

ITSENSE

Capacitive Sense Module (CS0) ICS0

Supply Current

CS module bias current, 25 Â°C

CS module alone, maximum code

output, 25 Â°C

Wake-on-CS threshold (suspend

mode with regulator and CS mod-

ule on)9

EFM8SB1 Data Sheet

Electrical Specifications

Typ

Max

Units

0.30

ÂµA

0.50

ÂµA

0.50

ÂµA

0.80

ÂµA

0.05

ÂµA

0.08

ÂµA

0.20

ÂµA

0.28

ÂµA

300

ÂµA

740

ÂµA

400

ÂµA

0.4

ÂµA

2.6

ÂµA

8.8

ÂµA

260

ÂµA

140

ÂµA

125

ÂµA

130

180

ÂµA

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