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EFM8SB1 Datasheet, PDF (16/55 Pages) Silicon Laboratories – The EFM8SB1 highlighted features are listed below
Parameter
Crystal Drive Current
Symbol Test Condition
Min
IXTAL
XFCN = 0
—
XFCN = 1
—
XFCN = 2
—
XFCN = 3
—
XFCN = 4
—
XFCN = 5
—
XFCN = 6
—
XFCN = 7
—
Table 4.8. External Clock Input
Parameter
Symbol Test Condition
Min
External Input CMOS Clock
fCMOS
0
Frequency (at EXTCLK pin)
External Input CMOS Clock High tCMOSH
18
Time
External Input CMOS Clock Low tCMOSL
18
Time
Table 4.9. ADC
Parameter
Resolution
Throughput Rate
Tracking Time
Power-On Time
SAR Clock Frequency
Conversion Time
Sample/Hold Capacitor
Input Pin Capacitance
Input Mux Impedance
Voltage Reference Range
Input Voltage Range1
Symbol Test Condition
Min
Nbits
12 Bit Mode
10 Bit Mode
fS
12 Bit Mode
—
10 Bit Mode
—
tTRK
Initial Acquisition
1.5
Subsequent Acquisitions (DC in-
1.1
put, burst mode)
tPWR
1.5
fSAR
High Speed Mode,
—
Low Power Mode
—
TCNV
10-Bit Conversion
13
CSAR
Gain = 1
—
Gain = 0.5
—
CIN
—
RMUX
—
VREF
1
VIN
Gain = 1
0
Gain = 0.5
0
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EFM8SB1 Data Sheet
Electrical Specifications
Typ
Max
Unit
0.5
—
µA
1.5
—
µA
4.8
—
µA
14
—
µA
40
—
µA
120
—
µA
550
—
µA
2.6
—
mA
Typ
Max
Unit
—
25
MHz
—
—
ns
—
—
ns
Typ
Max
Unit
12
Bits
10
Bits
—
75
ksps
—
300
ksps
—
—
us
—
—
us
—
—
µs
—
8.33
MHz
—
4.4
MHz
—
—
Clocks
16
—
pF
13
—
pF
20
—
pF
5
—
kΩ
—
VDD
V
—
VREF
V
—
2 x VREF
V
Rev. 1.2 | 15