EFM8SB1 Datasheet, PDF (12/55 Pages) Silicon Laboratories – The EFM8SB1 highlighted features are listed below

4. Electrical Specifications
EFM8SB1 Data Sheet
Electrical Specifications
4.1 Electrical Characteristics
All electrical parameters in all tables are specified under the conditions listed in Table 4.1 Recommended Operating Conditions on page
11, unless stated otherwise.
Table 4.1. Recommended Operating Conditions
Parameter
Symbol
Operating Supply Voltage on VDD V_DD
Minimum RAM Data Retention
Voltage on VDD¹
V_RAM
System Clock Frequency
f_SYSCLK
Operating Ambient Temperature T_A
Note:
1. All voltages with respect to GND.
Test Condition
Not in Sleep Mode
Sleep Mode
Min
Typ
Max
Unit
1.8
2.4
3.6
V
—
1.4
—
V
—
0.3
0.5
V
0
—
25
MHz
–40
—
85
°C
Table 4.2. Power Consumption
Parameter
Symbol Conditions
Min
Digital Supply Current
Normal Mode supply current - Full I_DD
V_DD = 1.8–3.6 V, f_SYSCLK
—
speed with code executing from
= 24.5 MHz
flash ^{3 , 4 , 5}
V_DD = 1.8–3.6 V, f_SYSCLK = 20
—
MHz
V_DD = 1.8–3.6 V, f_SYSCLK = 32.768
—
kHz
Normal Mode supply current fre- I_DDFREQ V_DD = 1.8–3.6 V, T = 25 °C,
—
quency sensitivity^{1, 3, 5}
f_SYSCLK < 14 MHz
V_DD = 1.8–3.6 V, T = 25 °C,
—
f_SYSCLK > 14 MHz
Idle Mode supply current - Core I_DD
V_DD = 1.8–3.6 V, f_SYSCLK = 24.5
—
halted with peripherals running^{4 , 6}
MHz
V_DD = 1.8–3.6 V, f_SYSCLK = 20
—
MHz
V_DD = 1.8–3.6 V, f_SYSCLK = 32.768
—
kHz
Idle Mode Supply Current Frequen- I_DDFREQ V_DD = 1.8–3.6 V, T = 25 °C
—
cy Sensitivity^{1 ,6}
Suspend Mode Supply Current
I_DD
V_DD = 1.8–3.6 V
—
Sleep Mode Supply Current with I_DD
1.8 V, T = 25 °C
—
RTC running from 32.768 kHz
crystal
3.6 V, T = 25 °C
—
1.8 V, T = 85 °C
—
3.6 V, T = 85 °C
—
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Typ
3.6
3.1
84
174
88
1.8
1.4
82
67
77
0.60
0.80
0.80
1.00
Max
Units
4.5
mA
—
mA
—
µA
—
µA/MHz
—
µA/MHz
3.0
mA
—
mA
—
µA
—
µA/MHz
—
µA
—
µA
—
µA
—
µA
—
µA
Rev. 1.2 | 11