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RX220_15 Datasheet, PDF (99/107 Pages) Renesas Technology Corp – Renesas MCUs
RX220 Group
5. Electrical Characteristics
Table 5.47 E2 DataFlash Characteristics (4)
medium-speed operating mode 1B
Conditions: VCC = AVCC0 = 1.62 to 3.6 V, VSS = AVSS0 = VREFL0 = 0 V
Temperature range for the programming/erasure operation: Ta = –40 to +105°C
FCLK = 4 MHz
FCLK = 32 MHz*1
Item
Symbol
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Programming time
when NDPEC ≤ 100 times
2 bytes
8 bytes
tDP2
—
tDP8
—
0.28
5.1
0.32
6.0
—
0.20
2.8
ms
—
0.22
3.2
Programming time
when NDPEC > 100 times
2 bytes
8 bytes
tDP2
—
tDP8
—
0.36
7.6
0.40
8.8
—
0.25
4.2
ms
—
0.28
4.5
Erasure time
128 bytes
tDE128
—
4.8
32.3
—
4.1
12
ms
when NDPEC ≤ 100 times
Erasure time
128 bytes
tDE128
—
5.8
51.4
—
4.9
17
ms
when NDPEC > 100 times
Blank check time
2 bytes
tDBC2
—
—
110
—
—
40
μs
2 Kbytes
tDBC2K
—
—
16.3
—
—
2.6
ms
Suspend delay time during programming
tDSPD
—
(in programming/erasure priority mode)
—
1.7
—
—
1.6
ms
First suspend delay time during
tDSPSD1
—
programming (in suspend priority mode)
—
220
—
—
120
μs
Second suspend delay time during
tDSPSD2
—
programming (in suspend priority mode)
—
1.7
—
—
1.6
ms
Suspend delay time during erasing
(in programming/erasure priority mode)
tDSED
—
—
1.7
—
—
1.6
ms
First suspend delay time during erasing
tDSESD1
—
(in suspend priority mode)
—
220
—
—
120
μs
Second suspend delay time during erasing tDSESD2
—
(in suspend priority mode)
—
1.7
—
—
1.6
ms
Note 1. The operating frequency is 8 MHz (max.) when the voltage is in the range from 1.62 V to less than 2.7 V.
R01DS0130EJ0110 Rev.1.10
Dec 20, 2013
Page 99 of 105