RX220_15 Datasheet, PDF (98/107 Pages) Renesas Technology Corp – Renesas MCUs

RX220 Group
5. Electrical Characteristics
5.9 E2 DataFlash (Flash Memory for Data Storage) Characteristics
Table 5.44 E2 DataFlash Characteristics (1)
Item
Reprogramming/erasure cycle*¹
Data hold time
After 100000
times of N_DPEC
Symbol
N_DPEC
t_DRP
Min.
100000
30*²
Typ.
—
—
Max.
—
—
Unit
Times
Year
Test Conditions
T_a = +85°C
Note 1. The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000),
erasing can be performed n times for each block. For instance, when 8-byte programming is performed 16 times for different
addresses in 128-byte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,
programming the same address for several times as one erasing is not enabled (overwriting is prohibited).
Note 2. This result is obtained from reliability testing.
Table 5.45 E2 DataFlash Characteristics (2)
FCLK = 4 MHz
FCLK = 32 MHz
Item
Symbol
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Peripheral clock notification command wait
t_PCKA
—
time
—
960
—
—
120
μs
Table 5.46 E2 DataFlash Characteristics (3)
medium-speed operating mode 1A
Conditions: VCC = AVCC0 = 2.7 to 5.5 V, VREFH0 = AVCC0, VSS = AVSS0 = VREFL0 = 0 V
Temperature range for the programming/erasure operation: T_a = –40 to +105°C
FCLK = 4 MHz
FCLK = 32 MHz
Item
Symbol
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Programming time
when N_DPEC ≤ 100 times
2 bytes
8 bytes
t_DP2
—
t_DP8
—
0.19
4.4
0.24
5.1
—
0.13
2.0
ms
—
0.13
2.2
Programming time
when N_DPEC > 100 times
2 bytes
8 bytes
t_DP2
—
t_DP8
—
0.25
6.4
0.32
7.5
—
0.17
3.0
ms
—
0.18
3.2
Erasure time
128 bytes
t_DE128
—
3.3
27.1
—
2.5
when N_DPEC ≤ 100 times
8
ms
Erasure time
128 bytes
t_DE128
—
4.0
45.1
—
3.0
12
ms
when N_DPEC > 100 times
Blank check time
2 bytes
t_DBC2
—
—
98
—
—
35
μs
2 Kbytes
t_DBC2K
—
—
16
—
—
2.5
ms
Suspend delay time during programming
t_DSPD
—
(in programming/erasure priority mode)
—
0.9
—
—
0.8
ms
First suspend delay time during
t_DSPSD1
—
programming (in suspend priority mode)
—
220
—
—
120
μs
Second suspend delay time during
t_DSPSD2
—
programming (in suspend priority mode)
—
0.9
—
—
0.8
ms
Suspend delay time during erasing
(in programming/erasure priority mode)
t_DSED
—
—
0.9
—
—
0.8
ms
First suspend delay time during erasing
t_DSESD1
—
(in suspend priority mode)
—
220
—
—
120
μs
Second suspend delay time during erasing t_DSESD2
—
(in suspend priority mode)
—
0.9
—
—
0.8
ms
R01DS0130EJ0110 Rev.1.10
Dec 20, 2013
Page 98 of 105