RX220_15 Datasheet, PDF (95/107 Pages) Renesas Technology Corp – Renesas MCUs

RX220 Group
5. Electrical Characteristics
5.8 ROM (Flash Memory for Code Storage) Characteristics
Table 5.40 ROM (Flash Memory for Code Storage) Characteristics (1)
Item
Reprogramming/erasure cycle*¹
Data hold time
After 1000 times
of N_PEC
After 10000 times
of N_PEC
Symbol
N_PEC
t_DRP
Min.
10000
30*²
1*²
Typ.
Max.
Unit
Conditions
—
—
Times
—
—
Year T_a = +85°C
—
—
Year
Note 1. Definition of reprogram/erase cycle: The reprogram/erase cycle is the number of erasing for each block. When the reprogram/
erase cycle is n times (n = 10000), erasing can be performed n times for each block. For instance, when 128-byte programming
is performed 16 times for different addresses in 2-Kbyte block and then the entire block is erased, the reprogram/erase cycle is
counted as one. However, programming the same address for several times as one erasing is not enabled (overwriting is
prohibited).
Note 2. This result is obtained from reliability testing.
Table 5.41 ROM (Flash Memory for Code Storage) Characteristics (2)
FCLK = 4 MHz
FCLK = 32 MHz
Item
Symbol
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Peripheral clock notification command
wait time
t_PCKA
—
—
960
—
—
120
µs
R01DS0130EJ0110 Rev.1.10
Dec 20, 2013
Page 95 of 105