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RX220_15 Datasheet, PDF (97/107 Pages) Renesas Technology Corp – Renesas MCUs
RX220 Group
5. Electrical Characteristics
Table 5.43 ROM (Flash Memory for Code Storage) Characteristics (4)
medium-speed operating mode 1B
Conditions: VCC = AVCC0 = 1.62 to 3.6 V, VSS = AVSS0 = VREFL0 = 0 V
Temperature range for the programming/erasure operation: Ta = –40 to +105°C
FCLK = 4 MHz
FCLK = 32 MHz*1
Item
Symbol
Unit
Min.
Typ. Max.
Min.
Typ.
Max.
Programming time
2 bytes
when NPEC ≤ 100 times 8 bytes
128 bytes
Programming time
2 bytes
when NPEC > 100 times 8 bytes
128 bytes
Erasure time
when NPEC ≤ 100 times
Erasure time
when NPEC > 100 times
2 Kbytes
2 Kbytes
tP2
tP8
tP128
tP2
tP8
tP128
tE2K
tE2K
Suspend delay time during programming tSPD
(in programming/erasure priority mode)
—
0.25 5.0
—
0.21
2.8
ms
—
0.25 5.3
—
0.21
3.0
—
0.92 14.0
—
0.65
8.3
—
0.31 6.2
—
0.26
3.5
ms
—
0.31 6.6
—
0.26
3.7
—
1.09 17.5
—
0.77
10.0
—
21.0 113.6
—
18.5
46
ms
—
25.6 220.6
—
22.5 90 (1000 times ≥
ms
NPEC > 100 times),
98 (10000 times ≥
NPEC > 1000 times)
—
— 1.7
—
—
1.6
ms
First suspend delay time during
tSPSD1
—
— 220
—
—
120
μs
programming (in suspend priority mode)
Second suspend delay time during
tSPSD2
—
— 1.7
—
—
1.6
ms
programming (in suspend priority mode)
Suspend delay time during erasing
tSED
—
— 1.7
—
—
1.6
ms
(in programming/erasure priority mode)
First suspend delay time during erasing tSESD1
—
— 220
—
—
120
μs
(in suspend priority mode)
Second suspend delay time during
tSESD2
—
— 1.7
—
—
1.6
ms
erasing (in suspend priority mode)
FCU reset time
tFCUR
20 μs or
—
—
20 μs or
—
—
μs
longer and
longer and
FCLK × 6
FCLK × 6
or greater
or greater
Note 1. The operating frequency is 8 MHz (max.) when the voltage is in the range from 1.62 V to less than 2.7 V.
R01DS0130EJ0110 Rev.1.10
Dec 20, 2013
Page 97 of 105