RX220_15 Datasheet, PDF (96/107 Pages) Renesas Technology Corp – Renesas MCUs

RX220 Group
5. Electrical Characteristics
Table 5.42 ROM (Flash Memory for Code Storage) Characteristics (3)
medium-speed operating mode 1A
Conditions: VCC = AVCC0 = 2.7 to 5.5 V, VSS = AVSS0 = VREFL0 = 0 V
Temperature range for the programming/erasure operation: T_a = –40 to +105°C
FCLK = 4 MHz
FCLK = 32 MHz
Item
Symbol
Unit
Min.
Typ. Max.
Min.
Typ. Max.
Programming time
2 bytes
when N_PEC ≤ 100 times _{8 bytes}
128 bytes
Programming time
2 bytes
when N_PEC > 100 times _{8 bytes}
128 bytes
Erasure time
2 Kbytes
when N_PEC ≤ 100 times
Erasure time
2 Kbytes
when N_PEC > 100 times
Suspend delay time during programming
(in programming/erasure priority mode)
t_P2
t_P8
t_P128
t_P2
t_P8
t_P128
t_E2K
t_E2K
t_SPD
—
0.19 4.3
—
0.12 2.0 ms
—
0.19 4.4
—
0.12 2.0
—
0.67 10.7
—
0.41 4.8
—
0.23 5.3
—
0.15 2.5 ms
—
0.23 5.4
—
0.15 2.5
—
0.80 13.2
—
0.48 6.0
—
13.0 92.8
—
10.5 29 ms
—
15.9 176.9
—
12.8 60 ms
—
—
0.9
—
—
0.8 ms
First suspend delay time during
t_SPSD1
—
programming (in suspend priority mode)
—
220
—
—
120 μs
Second suspend delay time during
t_SPSD2
—
—
0.9
—
—
0.8 ms
programming (in suspend priority mode)
Suspend delay time during erasing
t_SED
—
—
0.9
—
—
0.8 ms
(in programming/erasure priority mode)
First suspend delay time during erasing
t_SESD1
—
(in suspend priority mode)
—
220
—
—
120 μs
Second suspend delay time during erasing t_SESD2
—
—
0.9
—
—
0.8 ms
(in suspend priority mode)
FCU reset time
t_FCUR 20 μs or longer —
and FCLK × 6
or greater
— 20 μs or longer —
and FCLK × 6
or greater
—
μs
R01DS0130EJ0110 Rev.1.10
Dec 20, 2013
Page 96 of 105