M16C63 Datasheet, PDF (64/115 Pages) Renesas Technology Corp – RENESAS MCU

M16C/63 Group
5. Electrical Characteristics
V_CC1 = V_CC2 = 5 V
Table 5.21 Electrical Characteristics (3)
V_CC1 = V_CC2 = 4.2 to 5.5 V, V_SS = 0 V at T_opr = −20 to 85°C/−40 to 85°C, f_(BCLK) = 20 MHz unless otherwise specified.
Symbol
Parameter
Measuring Condition
Standard
Unit
Min. Typ. Max.
I_CC
Power supply current High-speed mode f_(BCLK) = 20 MHz (no division)
XIN = 20 MHz (square wave)
In single-chip, mode,
125 kHz on-chip oscillator stop
the output pin are
CM15 = 1 (drive capacity High)
open and other pins
A/D converter stop
are V_SS
f_(BCLK) =20 MHz (no division)
XIN = 20 MHz (square wave)
10.7
mA
125 kHz on-chip oscillator stop
11.4
mA
CM15 = 1 (drive capacity High)
A/D converter operating⁽²⁾
f_(BCLK) = 20 MHz
XIN = 20 MHz (square wave)
125 kHz on-chip oscillator stop
10.1
mA
CM15 = 0 (drive capacity Low)
A/D converter stop
f_(BCLK) = 20 MHz (no division)
XIN = 20 MHz (square wave)
125 kHz on-chip oscillator stop
9.1
mA
CM15 = 1 (drive capacity High)
PCLKSTP1 = FF (peripheral clock stop)
f_(BCLK) = 20 MHz (no division)
XIN = 20 MHz (square wave)
125 kHz on-chip oscillator stop
8.5
mA
CM15 = 0 (drive capacity Low)
PCLKSTP1 = FF (peripheral clock stop)
40 MHz on-chip Main clock stop
oscillator mode
40 MHz on-chip oscillator on
divide-by-2 (f_(BCLK) = 20 MHz)
125 kHz on-chip oscillator stop
9.0
mA
125 kHz on-chip Main clock stop
oscillator mode
40 MHz on-chip oscillator stop
125 kHz on-chip oscillator on, no division
450.0
μA
FMR22 = 1 (slow read mode)
Low-power mode f_(BCLK) = 32 kHz
FMR22 = FMR23 = 1 (in low current consumption
80.0
read mode)
μA
On flash memory ⁽¹⁾
Wait mode
f_(BCLK) = 32 kHz
Main clock stop
40 MHz on-chip oscillator stop
125 kHz on-chip oscillator on
5.6
μA
PM25 = 1 (peripheral function clock fC operating)
T_opr = 25°C
Real-time clock operating
f_(BCLK) = 32 kHz
Main clock stop
40 MHz on-chip oscillator stop
125 kHz on-chip oscillator stop
5.3
μA
PM25 = 0 (peripheral function clock fC stop)
T_opr = 25°C
Stop mode
T_opr = 25°C
2.4
μA
During flash
f_(BCLK) = 10 MHz, PM17 = 1 (one wait)
memory program _{VCC1 = 5.0 V}
20.0
mA
During flash
memory erase
f_(BCLK) = 10 MHz, PM17 = 1 (one wait)
V_CC1 = 5.0 V
30.0
mA
Notes:
1. This indicates the memory in which the program to be executed exists.
2. A/D conversion is executed in repeat mode.
REJ03B0271-0100 Rev.1.00 Sep 15, 2009
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