PD70F3461_15 Datasheet, PDF (51/63 Pages) Renesas Technology Corp – V850E/CAG4-M 32-Bit Single-Chip Microcontroller

µPD70F3461
6.2.3 Data Flash End-of-Line On-Board Programming Characteristics (PG-FP4: CSI)
T_A =-40 to +40°C
V_DD5X = 4.5 to 5.5V
V_DD3x = AV_DD = BV_DD3x = MV_DD3x = 3.0 to 3.6V
V_SS5X = V_SS3x = AV_SS = BV_SS5X = BV_SS3X = MV_SS3X = 0V
Table 6-7: Data Flash End-of-Line On-Board Programming Characteristics (PG-FP4: CSI)
Parameter^a
Symbol
Conditions
MIN.
TYP.
Blank Check Time
Erase Time
Write Time
Read Verify Time
t_DFECBL
t_DFECER ^{W/E cycles ≤ 5}
f_OSC = 16MHz
t_{DFECWR fCSICLK = 2.5MHz}
t_DFECVR
0.01
0.20
2
1
a. All parameters apply to the data flash area, i.e. all code flash blocks (0 to 15).
MAX. Unit
0.02
s
0.40
s
4
s
2
s
Note: The specified value does not include the time needed to establish the connection to the device.
6.2.4 Data Flash End-of-Line Self-Programming Characteristics
T_A =-40 to +40°C
V_DD5X = 4.5 to 5.5V
V_DD3x = AV_DD = BV_DD3x = MV_DD3x = 3.0 to 3.6V
V_SS5X = V_SS3x = AV_SS = BV_SS5X = BV_SS3X = MV_SS3X = 0V
W/E cycles ≤ 5
Table 6-8: Data Flash End-of-Line Self-Programming Characteristics
Parameter^a
Symbol
Conditions
MIN.
TYP.
MAX. Unit
Blank Check Time^b
Erase Time^c
Write Time
Internal Verify Time^d
t_DFESBL,2k
One memory block (2k)
t_DFESER,2k
t_DFESWR,1W Write one word
t_DFESWR,4W Write four words
t_DFESVR,2k One memory block (2k)
0.39
0.47
ms
13.46
53.86
ms
0.13
0.44
ms
0.25
1.50
ms
2.71
3.26
ms
a. All parameters apply to the data flash area, i.e. all code flash blocks (0 to 15).
b. Scales approximately linear with the number of memory blocks checked.
c. Values increase only slightly if two, four, eight memory blocks are erased.
d. Scales approximately linear with the number of memory blocks verified.
Note: The specified value does not include the time needed to establish the connection to the device.
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Datasheet U18578EE1V0DS00