PD70F3461_15 Datasheet, PDF (48/63 Pages) Renesas Technology Corp – V850E/CAG4-M 32-Bit Single-Chip Microcontroller

6. Electrical Specification : Flash Memory Characteristics
µPD70F3461
6.1 Code Flash Memory Characteristics
6.1.1 Code Flash General Characteristics
T_A =-40 to +105°C
V_DD5X = 4.5 to 5.5V
V_DD3x = AV_DD = BV_DD3x = MV_DD3x = 3.0 to 3.6V
V_SS5X = V_SS3x = AV_SS = BV_SS5X = BV_SS3X = MV_SS3X = 0V
Table 6-1: Code Flash General Characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Number of rewrites
Data retention
c_CFWRT
t_CFRET
1000
15
Write current (DC)^a
I_CFWRT
30
Erase current (DC)^a
I_CFER
28
a. Total 3V DC current of the code flash which is supplied by pins V_DD30, V_DD31 and V_DD32.
6.1.2 Code Flash Self-Programming Characteristics over Lifetime
T_A =-40 to +105°C
V_DD5X = 4.5 to 5.5V
V_DD3x = AV_DD = BV_DD3x = MV_DD3x = 3.0 to 3.6V
V_SS5X = V_SS3x = AV_SS = BV_SS5X = BV_SS3X = MV_SS3X = 0V
Unit
times
years
mA
mA
Cautions: 1. The values given in Table 6-2 are only valid for a CPU frequency of 80MHz.
2. The following pre-compile option was used to determine these values:
STATUS_CHECK_USER (in SelfLibSetup.h)
Table 6-2: Code Flash Self-Programming Characteristics over Lifetime
Parameter
Symbol
Conditions
MIN.
TYP.
MAX. Unit
Blank Check Time
Erase Time
Write Time
t_CFLBL,4K One memory block (4K)
t_CFVBL,256K 64 memory blocks (256K)
t_CFLER,4K One memory block (4K)
t_CFLER,256K 64 memory blocks (256K)
t_{CFLWR,2W Write two words}^a
t_CFLWR,4K
One memory block (4K)
@ 256 Bytes^b
0.66
0.79
ms
21.67
26.00
ms
13.97 279.40 ms
34.76 695.20 ms
0.33
1.10
ms
29.48 423.72 ms
Internal Verify Time
t_CFLVR,4K One memory block (4K)
t_CFLVR,256K 64 memory blocks (256K)
2.86
3.43
ms
171.38 205.66 ms
a. The corresponding library call is configured for 2 words per call.
b. The corresponding library call uses a 256 Bytes (= 64 words) source buffer.
Datasheet U18578EE1V0DS00
48