PD70F3461_15 Datasheet, PDF (50/63 Pages) Renesas Technology Corp – V850E/CAG4-M 32-Bit Single-Chip Microcontroller

6.2 Data Flash Memory Characteristics
µPD70F3461
6.2.1 Data Flash General Characteristics
T_A =-40 to +105°C
V_DD5X = 4.5 to 5.5V
V_DD3x = AV_DD = BV_DD3x = MV_DD3x = 3.0 to 3.6V
V_SS5X = V_SS3x = AV_SS = BV_SS5X = BV_SS3X = MV_SS3X = 0V
Table 6-5: Data Flash General Characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Size of one data flash
section
S_DFS
2
Number of data flash
sections
c_DFS
16
Number of rewrites of
one data flash section
c_DFWRT
10000
Data retention
after 1000 rewrite cycles
15
t_DFRET
after 10000 rewrite cycles
5
Write current (DC)^a
I_DFWRT
15
Erase current (DC)^a
I_DFER
14
a. Total 3V DC current of the data flash which is supplied by pins V_DD30, V_DD31 and V_DD32.
Unit
KBytes
sections
times
years
years
mA
mA
6.2.2 Data Flash Self-Programming Characteristics over Lifetime
T_A =-40 to +105°C
V_DD5X = 4.5 to 5.5V
V_DD3x = AV_DD = BV_DD3x = MV_DD3x = 3.0 to 3.6V
V_SS5X = V_SS3x = AV_SS = BV_SS5X = BV_SS3X = MV_SS3X = 0V
Cautions: 1. The values given in Table 6-6 are only valid for a CPU frequency of 80MHz.
2. The following pre-compile option was used to determine these values:
STATUS_CHECK_USER (in SelfLibSetup.h)
Table 6-6: Data Flash Self-Programming Characteristics over Lifetime
Parameter
Symbol
Conditions
MIN.
TYP.
MAX. Unit
Blank Check Time^a
Erase Time^b
Write Time
Internal Verify Time^c
t_DFLBL,2k
One memory block (2k)
t_DFLER,2k
t_DFLWR,1W Write one word
t_DFLWR,4W Write four words
t_DFLVR,2k One memory block (2k)
0.39
0.47
ms
13.46 269.15 ms
0.13
1.54
ms
0.25
5.89
ms
2.71
3.26
ms
a. Scales approximately linear with the number of memory blocks checked.
b. Values increase only slightly if two, four, eight memory blocks are erased.
c. Scales approximately linear with the number of memory blocks verified.
Datasheet U18578EE1V0DS00
50