RX630_15 Datasheet, PDF (142/156 Pages) Renesas Technology Corp – Renesas MCUs

RX630 Group
5. Electrical Characteristics
5.12 E² Flash Characteristics
Table 5.32 E² Flash Characteristics (1)
Conditions: VCC = AVCC0 = VREFH = VCC_USB = 2.7 to 3.6 V, VREFH0 = 2.7 V to AVCC0
VSS = AVSS0 = VREFL/VREFL0 = VSS_USB = 0 V
Temperature range for the programming/erasure operation: T_a = T_opr
Item
Reprogram/erase cycle*¹
Symbol
N_DPEC
Min.
100000
Typ.
—
Max.
—
Unit
Times
Test Conditions
Data hold time
t_DDRP
30*²
—
—
Year Ta = +85°C
Note 1. Definition of reprogram/erase cycle:
The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000),
erasing can be performed n times for each block. For instance, when 128-byte programming is performed 16 times for different
addresses in 2-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,
programming the same address for several times as one erasing is not enabled (overwriting is prohibited).
Note 2. This value is based on the result of the reliability test.
Table 5.33 E² Flash Characteristics (2)
Conditions: VCC = AVCC0 = VREFH = VCC_USB = 2.7 to 3.6 V, VREFH0 = 2.7 V to AVCC0
VSS = AVSS0 = VREFL/VREFL0 = VSS_USB = 0 V
Temperature range for the programming/erasure operation: T_a = T_opr
Item
Programming time
N_DPEC  100 times
2 bytes
Symbol
t_DP2
FCLK = 4 MHz
Min.
Typ.
Max.
—
0.7
6
20 MHz ≤ FCLK ≤ 50 MHz
Unit
Min.
Typ.
Max.
—
0.25
2
ms
Programming time
N_DPEC > 100 times
2 bytes
t_DP2
—
0.7
6
—
0.25
2
ms
Erasure time
N_DPEC  100 times
32 bytes
t_DE32
—
4
40
—
2
20
ms
Erasure time
N_DPEC > 100 times
32 bytes
t_DE32
—
7
40
—
4
20
ms
Blank check time
2 bytes
Suspend delay time during programming
First suspend delay time during erasure
(in suspend priority mode)
Second suspend delay time during erasure
(in suspend priority mode)
Suspend delay time during erasure
(in erasure priority mode)
t_DBC2
—
t_DSPD
—
t_DSESD1
—
t_DSESD2
—
t_DSEED
—
—
100
—
—
250
—
—
250
—
—
500
—
—
500
—
—
30
μs
—
120
μs
—
120
μs
—
300
μs
—
300
μs
R01DS0060EJ0160 Rev.1.60
May 19, 2014
Page 142 of 154