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HYB18M1G16 Datasheet, PDF (9/65 Pages) Qimonda AG – 1-Gbit x16 DDR Mobile-RAM
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Data Sheet
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
2
Functional Description
The 1-Gbit x16 DDR Mobile-RAM is a high-speed CMOS, dynamic random-access memory containing 1,073,741,824 bits. It
is internally configured as a quad-bank DRAM.
READ and WRITE accesses to the DDR Mobile-RAM are burst oriented; accesses start at a selected location and continue for
a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command,
followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select
the bank and row to be accessed (BA0, BA1 select the banks, A0 - A12 select the row). The address bits registered coincident
with the READ or WRITE command are used to select the starting column location for the burst access.
Prior to normal operation, the DDR Mobile-RAM must be initialized. The following sections provide detailed information
covering device initialization, register definition, command description and device operation.
2.1
Power On and Initialization
The DDR Mobile-RAM must be powered up and initialized in a predefined manner (see Figure 4). Operational procedures
other than those specified may result in undefined operation.
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FIGURE 4
Power-Up Sequence and Mode Register Sets
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Rev.1.0, 2007-03
9
10242006-Y557-TZXW
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