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HYB18M1G16 Datasheet, PDF (37/65 Pages) Qimonda AG – 1-Gbit x16 DDR Mobile-RAM
Data Sheet
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
2.4.7.1 WRITE to READ
Data for any WRITE burst may be followed by a subsequent READ command. To follow a WRITE without truncating the WRITE
burst, tWTR (WRITE to READ) should be met as shown in Figure 28.
FIGURE 28
Non-Interrupting WRITE to READ (max. tDQSS)
CK
CK
Command
Address
DQS
DQ
DM
WRITE
NOP
BA,Col b
tDQSSmax
Di b
NOP
NOP
READ
NOP
BA,Col n
tWTR
CL=3
NOP
DI b = Data In to column b .
3 subsequent elements of Data In are applied in the programmed order following DI b.
A non-interrupted burst of 4 is shown.
tWTR is referenced from the positive clock edge after the last Data In pair.
A10 is LOW with the WRITE command (Auto Precharge is disabled)
The READ and WRITE commands are to the same device but not necessarily to the same bank.
= Don't Care
Data for any WRITE burst may be truncated by a subsequent READ command, as shown in Figure 29. Note that only the data-
in pairs that are registered prior to the tWTR period are written to the internal array, and any subsequent data-in must be masked
with DM, as shown in Figure 29.
Rev.1.0, 2007-03
37
10242006-Y557-TZXW