HYB18M1G16 Datasheet, PDF (3/65 Pages) Qimonda AG – 1-Gbit x16 DDR Mobile-RAM

1
Overview
Data Sheet
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
1.1
Features
• Low power DDR 1Gbit x16 dual die implementation
• Each die organized as 4 banks x 8 MBit x 16
• 2 KByte page size
• Two Chip Selects (2 CS) for reducing power consumption
• Options for one CKE and two CKEs are available. Option with second CKE provides futher power saving
• Double-data-rate architecture: two data transfers per clock cycle
• Bidirectional data strobe (DQS) is transmitted / received with data; to be used in capturing data at the receiver
• DQS is edge-aligned with data for READs and center-aligned with data for WRITEs
• Differential clock input (CK / CK)
• Commands entered on positive CK edge; data and mask data are referenced to both edges of DQS
• Four internal banks for concurrent operation
• Programmable CAS latency: 2 and 3
• Programmable burst length: 2, 4, 8 and 16
• Programmable drive strength (full, half, quarter)
• Auto refresh and self refresh modes
• 8192 refresh cycles / 64ms
• Auto precharge
• Commercial (-0°C to +70°C) and Extended (-25°C to +85°C) operating temperature ranges
• 60-ball PG-VFBGA-60-6 package (11 × 10.5 × 1.0 mm)
• RoHS Compliant Product¹⁾
Power Saving Features
• Low supply voltages: V_DD = 1.70 V − 1.90 V, V_DDQ = 1.70 V − 1.90 V
• Optimized operating (I_DD0, I_DD4), self refresh (I_DD6) and standby currents (I_DD2, I_DD3)
• DDR I/O scheme with no DLL
• Programmable Partial Array Self Refresh (PASR)
• Temperature Compensated Self-Refresh (TCSR), controlled by on-chip temperature sensor
• Clock Stop, Power-Down and Deep Power-Down modes
Part Number Speed Code
Clock Frequency (f_CKmax)
Access Time (t_ACmax)
CL = 3
CL = 2
TABLE 1
Performance
-6
- 7.5
Unit
166
133
MHz
83
66
MHz
5.5
6.5
ns
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
Rev.1.0, 2007-03
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10242006-Y557-TZXW