HYB18M1G16 Datasheet, PDF(10/65 Page) Qimonda AG

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HYB18M1G16 Datasheet, PDF (10/65 Pages) Qimonda AG – 1-Gbit x16 DDR Mobile-RAM

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Data Sheet

HY[B/E]18M1G16[0/1]BF

1-Gbit DDR Mobile-RAM

1. At first, device core power (VDD) and device IO power (VDDQ) must be brought up simultaneously. Typically VDD and VDDQ

are driven from a single power converter output.

Assert and hold CKE to a HIGH level.

2. After VDD and VDDQ are stable and CKE is HIGH, apply stable clocks.

3. Wait for 200Âµs while issuing NOP or DESELECT commands.

4. Issue a PRECHARGE ALL command, followed by NOP or DESELECT commands for at least tRP period.

5. Issue two AUTO REFRESH commands, each followed by NOP or DESELECT commands for at least tRFC period.

6. Issue two MODE REGISTER SET commands for programming the Mode Register and Extended Mode Register, each

followed by NOP or DESELECT commands for at least tMRD period; the order in which both registers are programmed is

not important.

Following these steps, the DDR Mobile-RAM is ready for normal operation.

Rev.1.0, 2007-03

10242006-Y557-TZXW

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