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HYB18M1G16 Datasheet, PDF (23/65 Pages) Qimonda AG – 1-Gbit x16 DDR Mobile-RAM
Data Sheet
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
FIGURE 13
Basic READ Timing Parameters for DQs
CK
CK
DQS
tCK
tACmax
DQ
tCK
tCH
tCL
tRPRE
tDQSCK
tAC
tLZ
tDQSCK
tRPST
tDQSQmax
tHZ
DO n
tQH
DO n+1 DO n+2 DO n+3
tQH
DQS
tACmin
tRPRE
tDQSCK
tDQSCK
tRPST
tAC
tDQSQmax
tHZ
DQ
tLZ
DO n
tQH
DO n+1 DO n+2 DO n+3
tQH
DO n = Data Out from column n
Burst Length = 4 in the case shown
= Don't Care
CAS Latency = 3 in the case shown
All DQ are valid tAC after the CK edge. All DQ are valid tDQSQ after the DQS edge, regardless of tAC
Parameter
DQ output access time from CK/CK
DQS output access time from CK/CK
DQ & DQS low-impedance time from CK/CK
DQ & DQS high-impedance time from CK/CK
DQS - DQ skew
DQ / DQS output hold time from DQS
Data hold skew factor
Read preamble
CL = 3
CL = 2
Read postamble
ACTIVE to PRECHARGE command period
ACTIVE to ACTIVE command period
Symbol
TABLE 11
Timing Parameters for READ Command
-6
- 7.5
Unit Note
min.
max.
min.
max.
tAC
tDQSCK
tLZ
tHZ
tDQSQ
tQH
tQHS
tRPRE
2.0
2.0
1.0
–
–
tHP-tQHS
–
0.9
0.7
5.5
5.5
–
5.5
0.5
–
0.65
1.1
1.1
2.0
2.0
1.0
–
–
tHP-tQHS
–
0.9
0.7
6.5
6.5
–
6.5
0.6
–
0.75
1.1
1.1
ns
1)2)
ns
1)2)
ns
3)
ns
3)
ns
4)
ns
5)
ns
5)
tCK
–
tRPST
0.4
tRAS
42
tRC
60
0.6
0.4
70,000 45
–
65
0.6
tCK
–
70,000 ns
6)
–
ns
6)
Rev.1.0, 2007-03
23
10242006-Y557-TZXW