HYB18M1G16 Datasheet, PDF (36/65 Pages) Qimonda AG – 1-Gbit x16 DDR Mobile-RAM

Data Sheet
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
CK
CK
Command
Address
DQS
DQ
DM
WRITE
NOP
BA,Col b
t_DQSSmax
Di b
FIGURE 26
Non-Consecutive WRITE to WRITE (max. t_DQSS)
NOP
WRITE
BA,Col n
NOP
NOP
Di n
DI b (n) = Data In to column b (or column n).
3 subsequent elements of Data In are applied in the programmed order following DI b.
3 subsequent elements of Data In are applied in the programmed order following DI n.
Non-interrupted bursts of 4 are shown.
Each WRITE command may be to any active bank and may be to the same or different devices.
= Don't Care
Full-speed random WRITE accesses within a page or pages can be performed as shown in Figure 27.
CK
CK
Command
Address
DQS
DQ
DM
WRITE
WRITE
BA,Col b
BA,Col x
t_DQSSmax
Di b
WRITE
BA,Col n
Di b' Di x
FIGURE 27
Random WRITE Cycles (max. t_DQSS)
WRITE
BA,Col a
WRITE
BA,Col g
NOP
Di x' Di n Di n' Di a Di a'
DI b etc. = Data In to column b, etc. .
b', etc. = the next Data In following DI b, etc. according to the programmed burst order
= Don't Care
Programmed burst length = 2, 4, 8 or 16 in cases shown. If burst of 4, 8 or 16, burst would be truncated.
Each WRITE command may be to any active bank and may be to the same or different devices.
Rev.1.0, 2007-03
36
10242006-Y557-TZXW