HYB18M1G16 Datasheet, PDF (22/65 Pages) Qimonda AG – 1-Gbit x16 DDR Mobile-RAM

Data Sheet
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
Parameter
TABLE 10
Timing Parameters for ACTIVE Command
Symbol
-6
- 7.5
Unit Note
min. max. min. max.
ACTIVE to ACTIVE command period
t_RC
60 –
65 –
ns ¹⁾
ACTIVE to READ or WRITE delay
t_RCD
18 –
22.5 –
ns
ACTIVE bank A to ACTIVE bank B delay
t_RRD
12 –
15 –
ns
1) These parameters account for the number of clock cycles and depend on the operating frequency, as follows:
no. of clock cycles = specified delay / clock period; round to the next higher integer.
2.4.5
READ
READ bursts are initiated with a READ command, as shown
in Figure 12.
Basic timings for the DQs are shown in Figure 13; they apply
to all read operations.
The starting column and bank addresses are provided with
the READ command and Auto Precharge is either enabled or
disabled for that burst access. If Auto Precharge is enabled,
the row that is accessed will start precharge at the completion
of the burst, provided t_RAS has been satisfied. For the generic
READ commands used in the following illustrations, Auto
Precharge is disabled.
FIGURE 12
READ Command
CK
CK
CKE
CS
RAS
CAS
WE
A0-A9
A10
BA0,BA1
(High)
CA
Enable AP
AP
Disable AP
BA
= Don't Care
BA = Bank Address
CA = Column Address
AP = Auto Precharge
Rev.1.0, 2007-03
22
10242006-Y557-TZXW