HYB18M1G16 Datasheet, PDF (54/65 Pages) Qimonda AG – 1-Gbit x16 DDR Mobile-RAM

Data Sheet
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
Parameter
Symbol
TABLE 22
Electrical Characteristics
Values
Unit Note
min.
max.
Power Supply Voltage
Power Supply Voltage for DQ Output Buffer
Input leakage current
Output leakage current
V_DD
V_DDQ
I_IL
I_OL
1.70
1.70
-1.0
-1.5
1.90
1.90
1.0
1.5
V
1)2)
V
1)2)
µΑ
2)
µA
2)
Address and Command Inputs (BA, BA1, CKE, CS, RAS, CAS, WE)
Input high voltage
Input low voltage
V_IH
0.8 × V_DDQ
V_DDQ + 0.3
V
2)
V_IL
-0.3
0.2 × V_DDQ
V
2)
Clock Inputs (CK, CK)
DC input voltage
DC input differential voltage
AC input differential voltage
AC differential cross point voltage
V_IN
V_ID(DC)
V_ID(AC)
V_IX
-0.3
0.4 × V_DDQ
0.6 × V_DDQ
0.4 × V_DDQ
V_DDQ + 0.3
V_DDQ + 0.6
V_DDQ + 0.6
0.6 × V_DDQ
V
2)
V
2)3)
V
2)3)
V
2)4)
Data Inputs (DQ, DM, DQS)
DC input high voltage
DC input low voltage
AC input high voltage
AC input low voltage
V_IHD(DC)
V_ILD(DC)
V_IHD(AC)
V_ILD(AC)
0.7 × V_DDQ
-0.3
0.8 × V_DDQ
-0.3
V_DDQ + 0.3
0.3 x V_DDQ
V_DDQ + 0.3
0.2 × V_DDQ
V
2)
V
2)
V
2)
V
2)
Data Outputs (DQ, DQS)
Output high voltage (I_OH = -0.1 mA)
V_OH
0.9 × V_DDQ
–
V
2)
Output low voltage (I_OL = 0.1 mA)
V_OL
–
0.1 × V_DDQ
V
2)
1) Clock Frequency (fCKmax) 166 MHz (CL = 3) not guaranteed for VDDmin = VDDQmin = 1.70V at Tcmin of extended temperature range
2) See Table 25 and Figure 41 for overshoot and undershoot definition.
3) V_ID is the magnitude of the difference between the input level on CK and the input level on CK.
4) The value of V_IX is expected to be equal to 0.5 x V_DDQ and must track variations in the DC level.
Rev.1.0, 2007-03
54
10242006-Y557-TZXW