HYB18M1G16 Datasheet, PDF (4/65 Pages) Qimonda AG – 1-Gbit x16 DDR Mobile-RAM

Item
Banks
Rows
Columns
Addresses
BA0, BA1
A0 - A12
A0 - A9
Data Sheet
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
TABLE 2
Memory Addressing Scheme
Type¹⁾
Description
TABLE 3
Ordering Information
Commercial Temperature Range
HYB18M1G160BF-6
HYB18M1G161BF-6
HYB18M1G160BF-7.5
HYB18M1G161BF-7.5
166 MHz 4 Banks × 8 Mbit × 16 Low Power DDR Mobile-RAM, one CKE (CKE)
166 MHz 4 Banks × 8 Mbit × 16 Low Power DDR Mobile-RAM, two CKE (CKE0 and CKE1)
133 MHz 4 Banks × 8 Mbit × 16 Low Power DDR Mobile-RAM, one CKE (CKE)
133 MHz 4 Banks × 8 Mbit × 16 Low Power DDR Mobile-RAM, two CKE (CKE0 and CKE1)
Extended Temperature Range
HYE18M1G160BF-6
HYE18M1G161BF-6
HYE18M1G160BF-7.5
HYE18M1G161BF-7.5
166 MHz 4 Banks × 8 Mbit × 16 Low Power DDR Mobile-RAM, one CKE (CKE)
166 MHz 4 Banks × 8 Mbit × 16 Low Power DDR Mobile-RAM, two CKE (CKE0 and CKE1)
133 MHz 4 Banks × 8 Mbit × 16 Low Power DDR Mobile-RAM, one CKE (CKE)
133 MHz 4 Banks × 8 Mbit × 16 Low Power DDR Mobile-RAM, two CKE (CKE0 and CKE1)
1) HYB / HYE: Designator for memory products (HYB: standard temp. range; HYE: extended temp. range)
18M: 1.8V DDR Mobile-RAM
1G: 1Gbit density
160: 16 bit interface width; DDR-Mobile-RAM - One CKE (CKE)
161: 16 bit interface width; DDR-Mobile-RAM - Two CKE (CKE0 and CKE1)
B: die revision
F: green product
- 6/-7.5: speed grades (min. clock cycle time)
Rev.1.0, 2007-03
4
10242006-Y557-TZXW