MT40A256M16GE-075EAUT Datasheet, PDF (354/359 Pages) Micron Technology – Automotive DDR4 SDRAM

Table 159: Electrical Characteristics and AC Timing Parameters (Continued)
Parameter
RESET_L pulse low at power-up
Begin power supply ramp to power sup-
plies stable
RESET_n LOW to power supplies stable
RESET_n LOW to I/O and R_TT High-Z
Symbol
t_{PW_REST_L}
t_VDDPR
t_RPS
t_IOZ
REFRESH-to-ACTIVATE
or REFRESH command
4Gb
period (all bank
groups)
8Gb
16Gb
Average periodic re-
fresh interval
-40°C ≤ T_C ≤ 85°C
85°C < T_C ≤ 95°C
95°C < T_C ≤
105°C
105°C < T_C ≤
125°C
t_RFC1
t_RFC2
t_RFC4
t_RFC1
t_RFC2
t_RFC4
t_RFC1
t_RFC2
t_RFC4
t_REFI
t_REFI
t_REFI
t_REFI
Exit self refresh to commands not requir-
ing a locked DLL SRX to commands not
requiring a locked DLL in self refresh
abort
Exit self refresh to ZQCL, ZQCS and MRS
(CL, CWL, WR, RTP and gear-down)
Exit self refresh to commands requiring a
locked DLL
Minimum CKE low pulse width for self re-
fresh entry to self refresh exit timing
t_XS
t_{XS_ABORT}
t_{XS_FAST}
t_XSDLL
t_CKESR
DDR4-2666
Min Max
200
–
DDR4-2933
DDR4-3200
Min Max Min Max
200
–
200
–
MIN = N/A; MAX = 200
MIN = 0; MAX = 0
MIN = N/A; MAX = undefined
Refresh Timing
MIN = 260
MIN = 160
MIN = 110
MIN = 350
MIN = 260
MIN = 160
MIN = 550
MIN = 350
MIN = 260
MIN = N/A; MAX = 7.8
MIN = N/A; MAX = 3.9
MIN = N/A; MAX = 1.95
MIN = N/A; MAX = 0.975
Self Refresh Timing
MIN = ^tRFC + 10ns
MIN = ^tRFC4 + 10ns
MIN = ^tRFC4 + 10ns
MIN = ^tDLLK (MIN)
MIN = ^tCKE (MIN) + 1nCK
Reserved
Min Max
Unit
μs
ms
Notes
ns
ns
ns
1, 12
ns
1, 12
ns
1, 12
ns
1, 12
ns
1, 12
ns
1, 12
ns
1, 12
ns
1, 12
ns
1, 12
μs
12
μs
12
μs
12
μs
12
ns
1
ns
1
1
ns
CK
1
CK
1