MT40A256M16GE-075EAUT Datasheet, PDF (322/359 Pages) Micron Technology – Automotive DDR4 SDRAM

4Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Limits
6. When additive latency is enabled for I_DD1 , current changes by approximately +14% (x8),
+14% (x16).
7. When additive latency is enabled for I_DD2N , current changes by approximately +0.0%.
8. When DLL is disabled for I_DD2N, current changes by approximately 1%.
9. When CAL is enabled for I_DD2N, current changes by approximately –34%.
10. When gear-down is enabled for I_DD2N, current changes by approximately 0%.
11. When CA parity is enabled for I_DD2N, current changes by approximately +15%.
12. When additive latency is enabled for I_DD3N, current changes by approximately +9%.
13. When additive latency is enabled for I_DD4R, current changes by approximately +6%.
14. When read DBI is enabled for I_DD4R, current changes by approximately -8%.
15. When additive latency is enabled for I_DD4W, current changes by approximately +6% (x8),
+4% (x16).
16. When write DBI is enabled for I_DD4W, current changes by approximately 13%.
17. When write CRC is enabled for I_DD4W, current changes by approximately 4%.
18. When CA parity is enabled for I_DD4W, current changes by approximately +15% (x8),
+10% (x16).
19. When 2X REF is enabled for I_DD5R, current changes by approximately –16%.
20. When 4X REF is enabled for I_DD5R, current changes by approximately –35%.
21. I_PP0 test and limit is applicable for I_DD0 and I_DD1 conditions.
22. I_PP3N test and limit is applicable for all I_DD2x, I_DD3x, I_DD4x and I_DD8 conditions; that is, test-
ing I_PP3N should satisfy the I_PPs for the noted I_DD tests.
23. I_PP6x is applicable to I_DD6N, I_DD6E, I_DD6R and I_DD6A conditions.
Table 148: I_DD, I_PP, and I_DDQ Current Limits – Rev. B (–40° ≤ T_C ≤ 105°C)
Symbol
I_DD0: One bank ACTIVATE-to-PRECHARGE cur-
rent
I_PP0: One bank ACTIVATE-to-PRECHARGE I_PP
current
I_DD1: One bank ACTIVATE-to-READ-to- PRE-
CHARGE current
I_DD2N: Precharge standby current
I_DD2NT: Precharge standby ODT current
I_DD2P: Precharge power-down current
I_DD2Q: Precharge quiet standby current
I_DD3N: Active standby current
I_PP3N: Active standby I_PP current
I_DD3P: Active power-down current
I_DD4R: Burst read current
I_DD4W: Burst write current
I_DD5R: Burst refresh current (1X REF)
I_PP5R: Burst refresh I_PP current (1X REF)
Width
x8
x16
ALL
x8
x16
ALL
x8
x16
ALL
ALL
ALL
ALL
ALL
x8
x16
x8
x16
ALL
ALL
DDR4-2400
58
71
5
75
99
43
52
58
24
38
59
4
36
162
241
135
184
65
5
DDR4-2666
61
74
5
78
102
44
56
60
24
38
60
4
36
174
260
145
198
66
5
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
CCMTD-1725822587-10418
4gb_auto_ddr4_sdram_z90b.pdf - Rev. D 01/17 EN
322
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