MT40A256M16GE-075EAIT Datasheet, PDF (316/359 Pages) Micron Technology – Automotive DDR4 SDRAM

4Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Patterns and Test Conditions
Table 142: I_DD4W Measurement – Loop Pattern¹
Data³
0
0
WR 0 1 1 0 0 1 0 0 0 0 0 0 0 0 D0 = 00, D1 = FF,
1
D 1 0 0 0 0 1 0 0 0 0 0 0 0 0 ^{D2 = FF, D3 = 00,}
D4 = FF, D5 = 00,
2, 3
D_n, 1
D_n
1
1
1
0
1
3
3
0
0
0
7
F
0 _{D5 = 00, D7 = FF}
1
4
WR 0 1 1 0 0 1 1 1 0 0 0 7 F 0 D0 = FF, D1 = 00
5
D 1 0 0 0 0 1 0 0 0 0 0 0 0 0 ^{D2 = 00, D3 = FF}
6, 7
D_n, 1 1 1 1 0 1 3 3 0 0 0 7 F 0 ^{D4 = 00, D5 = FF}
D_n
D5 = FF, D7 = 00
2 8–11
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 2 instead
3 12–15
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 3 instead
4 16–19
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 1 instead
5 20–23
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 2 instead
6 24–27
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 3 instead
7 28–31
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 0 instead
8 32–35
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 0 instead⁴
9 36–39
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 1 instead⁴
10 40–43
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 2 instead⁴
11 44–47
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 3 instead ⁴
12 48–51
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 1 instead ⁴
13 52–55
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 2 instead ⁴
14 56–59
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 3 instead ⁴
15 60–63
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 0 instead ⁴
Notes:
1. DQS_t, DQS_c are V_DDQ when not toggling.
2. BG1 is a "Don't Care" for x16 devices.
3. Burst sequence driven on each DQ signal by WRITE command. Outside burst operation,
DQ signals are V_DDQ.
4. For x4 and x8 only.
CCMTD-1725822587-10418
4gb_auto_ddr4_sdram_z90b.pdf - Rev. D 01/17 EN
316
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