MT40A256M16GE-075EAIT Datasheet, PDF (285/359 Pages) Micron Technology – Automotive DDR4 SDRAM

4Gb: x8, x16 Automotive DDR4 SDRAM
Electrical Characteristics – AC and DC Output Measurement
Levels
Figure 225: Single-ended Output Slew Rate Definition
TR_se
V_OH(AC)
V_OL(AC)
TF_se
Table 115: Single-Ended Output Slew Rate
For R_ON = R_ZQ/7
Parameter
Single-ended output
slew rate
Symbol
SRQ_se
DDR4-1600/ 1866 / 2133 /
2400
Min
Max
4
9
DDR4-2666
Min
Max
4
9
DDR4-2933 / 3200
Min
Max
4
9
Unit
V/ns
Notes: 1. SR = slew rate; Q = query output; se = single-ended signals
2. In two cases a maximum slew rate of 12V/ns applies for a single DQ signal within a byte
lane:
• Case 1 is defined for a single DQ signal within a byte lane that is switching into a cer-
tain direction (either from HIGH-to-LOW or LOW-to-HIGH) while all remaining DQ sig-
nals in the same byte lane are static (they stay at either HIGH or LOW).
• Case 2 is defined for a single DQ signal within a byte lane that is switching into a cer-
tain direction (either from HIGH-to-LOW or LOW-to-HIGH) while all remaining DQ sig-
nals in the same byte lane are switching into the opposite direction (from LOW-to-
HIGH or HIGH-to-LOW, respectively). For the remaining DQ signal switching into the
opposite direction, the standard maximum limit of 9 V/ns applies.
Differential Outputs
Table 116: Differential Output Levels
Parameter
AC differential output high measurement level (for output slew
rate)
Symbol
V_OH,diff(AC)
DDR4-1600 to DDR4-3200
0.3 × V_DDQ
Unit
V
CCMTD-1725822587-10418
4gb_auto_ddr4_sdram_z90b.pdf - Rev. D 01/17 EN
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