MT40A256M16GE-075EAIT Datasheet, PDF (304/359 Pages) Micron Technology – Automotive DDR4 SDRAM

4Gb: x8, x16 Automotive DDR4 SDRAM
Thermal Characteristics
11. C_{DI_ADD_CMD} = C_I(ADD_CMD) - 0.5 × (C_I(CLK_t) + C_I(CLK_c)).
12. Maximum external load capacitance on ZQ pin: 5pF.
13. Only applicable if TEN pin does not have an internal pull-up.
Thermal Characteristics
Table 135: Thermal Characteristics
Parameter/Condition
Operating case temperature:
Commercial
Operating case temperature:
Industrial
Operating case temperature:
Automotive
Operating case temperature:
Ultra-high
REV B
78-ball “RH”
96-ball “GE”
Junction-to-case (TOP)
Junction-to-board
Junction-to-case (TOP)
Junction-to-board
Value
0 to +85
0 to +95
–40 to +95
–40 to +105
–40 to +125
7.7
20.9
5.0
19.0
Units
°C
°C
°C
°C
°C
°C/W
°C/W
°C/W
°C/W
Symbol
T_C
T_C
T_C
Notes
1, 2, 3
1, 2, 3, 4
1, 2, 3, 4
T_C
1, 2, 3, 4
T_C
1, 2, 3, 4
ΘJC
5
ΘJB
ΘJC
5
ΘJB
Notes:
1. MAX operating case temperature. T_C is measured in the center of the package.
2. A thermal solution must be designed to ensure the DRAM device does not exceed the
maximum T_C during operation.
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum T_C dur-
ing operation.
4. If T_C exceeds 85°C, the DRAM must be refreshed externally at 2x refresh, which is a 3.9μs
interval refresh rate.
5. The thermal resistance data is based off of a number of samples from multiple lots and
should be viewed as a typical number.
CCMTD-1725822587-10418
4gb_auto_ddr4_sdram_z90b.pdf - Rev. D 01/17 EN
304
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