MT40A256M16GE-075EAIT Datasheet, PDF (298/359 Pages) Micron Technology – Automotive DDR4 SDRAM

4Gb: x8, x16 Automotive DDR4 SDRAM
Electrical Characteristics – On-Die Termination Characteristics
Table 131: Reference Settings for ODT Timing Measurements
Measure
Parameter
t_ADC
t_AONAS
t_AOFAS
R_TT(Park)
Disable
–
Disable
Disable
R_TT(NOM)
R_ZQΩ
R_ZQΩ
R_ZQΩ
R_ZQΩ
R_TT(WR)
–
High-Z
–
–
VSW1
0.20V
0.20V
0.20V
0.20V
VSW2
0.40V
0.40V
0.40V
0.40V
Note
1, 2, 4
1, 3, 5
1, 2, 6
1, 2, 6
Notes:
1. MR settings are as follows: MR1 has A10 = 1, A9 = 1, A8 = 1 for R_TT(NOM) setting; MR5 has
A8 = 0, A7 = 0, A6 = 0 for R_TT(Park) setting; and MR2 has A11 = 0, A10 = 1, A9 = 1 for
R_TT(WR) setting.
2. ODT state change is controlled by ODT pin.
3. ODT state change is controlled by a WRITE command.
4. Refer to Figure 235 (page 298).
5. Refer to Figure 236 (page 299).
6. Refer to Figure 237 (page 299).
Figure 235: ^tADC Definition with Direct ODT Control
DODTLoff
Begin point: Rising edge
of CK_t, CK_c defined
by the end point of
DODTLoff
CK_c
DODTLon
Begin point: Rising edge
of CK_t, CK_c defined
by the end point of
DODTLon
CK_t
t_ADC
t_ADC
V_RTT,nom
DQ, DM
DQS_t, DQS_c
TDQS_t, TDQS_c
End point: Extrapolated
point at V_RTT,nom
Vsw2
Vsw1
V_SSQ
V_SSQ
V_RTT,nom
End point: Extrapolated
point at V_SSQ
CCMTD-1725822587-10418
4gb_auto_ddr4_sdram_z90b.pdf - Rev. D 01/17 EN
298
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