PIC18LF2X_13 Datasheet, PDF (443/560 Pages) Microchip Technology – PIC18(L)F2X/45K50 USB Flash MCU Product Brief

PIC18(L)F2X/4XK22
27.9 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +125°C
Param
No.
Sym
Characteristic
Min
Typ† Max Units
Conditions
Internal Program Memory
Programming Specifications⁽¹⁾
D170 _{VPP Voltage on MCLR/VPPpin}
8
—
9
V (Note 3), (Note 4)
D171 IDDP Supply Current during
Programming
—
—
10
mA
Data EEPROM Memory
D172 ED Byte Endurance
100K
—
— E/W -40C to +85C
D173 VDRW VDD for Read/Write
VDDMIN
— VDDMAX V Using EECON to read/
write
D175 TDEW Erase/Write Cycle Time
—
3
4
ms
D176 TRETD Characteristic Retention
—
40
— Year Provided no other
specifications are violated
D177 TREF Number of Total Erase/Write
Cycles before Refresh⁽²⁾
1M
10M
— E/W -40°C to +85°C
Program Flash Memory
D178 EP
Cell Endurance
10K
—
— E/W -40C to +85C (Note 5)
D179 VPR VDD for Read
VDDMIN
— VDDMAX V
D181 VIW VDD for Row Erase or Write
2.2
— VDDMAX V PIC18LF2X/4XK22
D182 VIW
VDDMIN
— VDDMAX V PIC18F2X/4XK22
D183 TIW Self-timed Write Cycle Time
—
2
—
ms
D184 TRETD Characteristic Retention
—
40
— Year Provided no other
specifications are violated
†
Note 1:
2:
3:
4:
5:
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write instruc-
tions.
Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
Required only if single-supply programming is disabled.
The MPLAB ICD 2 does not support variable VPP output. Circuitry to limit the MPLAB ICD 2 VPP voltage must
be placed between theMPLAB ICD 2 and target system when programming or debugging with the MPLAB
ICD 2.
Self-write and Block Erase.
 2010-2012 Microchip Technology Inc.
DS41412F-page 443