PIC16F688 Datasheet, PDF (145/174 Pages) Microchip Technology – 14-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology

PIC16F688
14.7 DC Characteristics: PIC16F688 -I (Industrial), PIC16F688 -E (Extended)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ TA ≤ +125°C for extended
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
D100 IULP Ultra Low-Power Wake-up —
200
Current
Capacitive Loading Specs
on Output Pins
D100 COSC2 OSC2 pin
—
—
D101
D120
D120A
D121
CIO
ED
ED
VDRW
All I/O pins
Data EEPROM Memory
Byte Endurance
Byte Endurance
VDD for Read/Write
—
—
100K
10K
VMIN
1M
100K
—
— nA
15* pF In XT, HS and LP modes when
external clock is used to drive
OSC1
50* pF
— E/W -40°C ≤ TA ≤ +85°C
— E/W +85°C ≤ TA ≤ +125°C
5.5 V Using EECON1 to read/write
VMIN = Minimum operating
voltage
D122 TDEW Erase/Write Cycle Time
—
5
6 ms
D123 TRETD Characteristic Retention
40
—
— Year Provided no other specifications
are violated
D124 TREF Number of Total Erase/Write 1M
10M
— E/W -40°C ≤ TA ≤ +85°C
Cycles before Refresh⁽⁴⁾
Program Flash Memory
D130 EP
Cell Endurance
10K 100K
— E/W -40°C ≤ TA ≤ +85°C
D130A ED
Cell Endurance
1K
10K
— E/W +85°C ≤ TA ≤ +125°C
D131 VPR VDD for Read
VMIN
—
5.5 V VMIN = Minimum operating
voltage
D132 VPEW VDD for Erase/Write
4.5
—
5.5 V
D133 TPEW Erase/Write cycle time
—
2
2.5 ms
D134 TRETD Characteristic Retention
40
—
— Year Provided no other specifications
are violated
* These parameters are characterized but not tested.
† Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 4: See Section 9.0 “Data EEPROM And Flash Program Memory Control” for additional information.
 2004 Microchip Technology Inc.
Preliminary
DS41203B-page 143